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Netzwerk-Profile
LinkedIn: Annalisa Cappellani | Berufsprofil - LinkedIn
PhD project carried out entirely in Siemens AG – Corporate Research (Munich – Research Labs) and Infineon Technologies AG – Innovation Projects (Dresden – 8” and 12” wafer fab pilot lines), Germany. PhD Project Focus: Gate Stack Engineering and Integration in advanced CMOS Logic Technology for RF applications.
LinkedIn: Annalisa Cappellani | LinkedIn
berufliche Netzwerk, das Fach- und Führungskräften wie Annalisa Cappellani ...
LinkedIn: Annalisa Cappellani | 职业档案 - LinkedIn
Engineer at Intel Mobile Communication - Enabling Technologies & Services PhD project carried out entirely in Siemens AG – Corporate Research (Munich –
Research Labs) and Infineon Technologies AG – Innovation Projects (Dresden –
8” and ...
Business-Profile
patentbuddy: Annalisa CAPPELLANI
INFINEON TECHNOLOGIES AG
Bücher
American Enterprise: A History of Business in America - Google Books
books.google.de
What does it mean to be an American? What are American ideas and values? American Enterprise, the companion book to a major exhibition at the Smithsonian’s...
Dokumente zum Namen
Dissertation on lv pll by dhwani sametrya
www.slideshare.net
one of the famous Silicon Valley golden rules which state “Higher the clock frequency, Greater the power consumption”. Digging deep into deep submicron CMOS t…
EBSCOhost | | 45nm High-k+Metal Gate Strain-Enhanced...
web.b.ebscohost.com
Annalisa Cappellani, Technology and Manufacturing Group, Intel Corporation. Chi-hing Choi, Technology and Manufacturing Group, Intel Corporation.
Veröffentlichungen allgemein
Gestrecktes Silicium - unserlexikon.de
www.unserlexikon.de
↑ Chris Auth, Mark Buehler, Annalisa Cappellani, Chi-hing Choi, Gary Ding, Weimin Han, Subhash Joshi,Brian McIntyre, Matt Prince, Pushkar Ranade, Justin Sandford, Christopher Thomas: 45nm High-k+Metal Gate Strain-Enhanced Transistors.
Artikel & Meinungen
Wikipedia: Gestrecktes Silicium – Wikipedia
Gestrecktes Silicium (englisch strained silicon) ist ein Verfahren in der Halbleitertechnik, bei ... Chris Auth, Mark Buehler, Annalisa Cappellani, Chi-hing Choi, Gary Ding, Weimin Han, Subhash Joshi,Brian McIntyre, Matt Prince, Pushkar ...
Wikipedia: Siliciumgermanium – Wikipedia
Siliciumgermanium (fachsprachlich; standardsprachlich Siliziumgermanium), kurz SiGe, ist ein ... Hochspringen ↑ Chris Auth, Mark Buehler, Annalisa Cappellani, Chi-hing Choi, Gary Ding, Weimin Han, Subhash Joshi,Brian McIntyre, Matt ...
Sonstiges
Annalisa Cappellani | LinkedIn
www.linkedin.com
View Annalisa Cappellani's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Annalisa Cappellani ...
US B2 - Method for roughening a surface of a semiconductor...
patents.google.com
A method for roughening a surface of a semiconductor substrate includes the steps of placing the substrate in a furnace, introducing Oxygen and an inert...
DE D1 - Verfahren zur herstellung eines mosfets mit sehr...
patents.google.com
, DE D1, DE D1, DE-D , DE , DE , DE D1, DE D1. Inventors, Annalisa Cappellani, Ludwig Dittmar, Dirk Schumann. Applicant, Infineon Technologies Ag. Export Citation, BiBTeX, EndNote, RefMan. Classifications (16), Legal Events (2) ...
WO A1 - Complementary metal oxide semiconductor integrated...
patents.google.com
A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain....
Annalisa Cappellani | Intel Corporation - Academia.edu
intel.academia.edu
Academia.edu is a place to share and follow research.
Gestrecktes Silicium – Chemie-Schule
www.chemie-schule.de
Heute im CHEMIE-UNTERRICHT: | Gestrecktes Silicium ✔ |
Siliciumgermanium – Chemie-Schule
www.chemie-schule.de
Heute im CHEMIE-UNTERRICHT: | Siliciumgermanium ✔ |
WO A2 - Verfahren zur herstellung eines mosfets mit sehr...
patents.google.com
Pareiškėjas, Annalisa Cappellani, Ludwig Dittmar, Infineon Technologies Ag, Dirk Schumann. Eksportuoti šaltinį, BiBTeX, EndNote, RefMan. Patentų šaltiniai ( 7) ...
37 CFR Notice by Publication - OG Date: 30 September 2003
www.uspto.gov
24, Annalisa Cappellani Semiconductor Component, Method For Producing The Semiconductor Component, And Method For Producing ...
A
personal.ph.surrey.ac.uk
Annalisa Cappellani deposited thin films of tantalum pentoxide doped with titanium. This novel material has a very high dielectric constant and has potential applications in memory devices. Currently Annalisa working for Intel in the USA. W.-L. Chen, K.R. Shull, T. Papatheodorou, D.A. Styrkas and J.L. Keddie, "Equilibrium ...
Intel Technology Journal - PDF Free Download
docplayer.net
His is mark.buehler at intel.com. Annalisa Cappellani is a Senior Integration Engineer in the Portland Technology Development Department. She joined Intel in ...
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Patent application
www.patentsencyclopedia.com
... provided by MapQuest, OpenStreetMap and contributors, CC-BY-SA. Patent applications by Annalisa Cappellani, Portland, OR US
The ultimate CMOS device and beyond
www.infona.pl
Kelin J. Kuhn, Uygar Avci, Annalisa Cappellani, Martin D. Giles, Michael Haverty, Seiyon Kim, Roza Kotlyar, Sasikanth Manipatruni, Dmitri ...
Verwandte Suchanfragen zu Annalisa Cappellani
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