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th European Solid-State Device Research Conference (ESSDERC 2016) -...

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... Italy Empirical Ballistic Mobility Model for Drift-Diffusion Simulation Axel Erlebach 1, Helen Lee 2, Fabian Bufler 1 1 Synopsys Schweiz GmbH, Switzerland; ...

IEICE Transactions

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Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER. › bin

[PDF] essderc Proceedings.comwww.proceedings.com › content

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Fabian Bufler, Luca Sponton, Axel Erlebach. Deterministic Simulation of SiGe HBTs Based on the Boltzmann ...

Summary Book IJRTE V7i4s November PDF - Scribdwww.scribd.com › document

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· Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian.M.BUFLER, Thomas FEUDEL, and wolfgang FICHTNER ...

Effect of Underlap on 30 nm Gate Length FinFET Based LNA ...

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Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH,. Simon BRUGGER, Fabian.M.BUFLER, Thomas FEUDEL, and wolfgang FICHTNER. › icvci › number16

Effect of Underlap on Input Impedance, Gain and Noise Figure in ...www.ciitresearch.org › dsp › view › DSP

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Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian.M.BUFLER, Thomas FEUDEL, and wolfgang FICHTNER, “Simulation of ...

Modeling of Ballistic Monolayer Black Phosphorus MOSFETs

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Axel Erlebach, K. H. Lee, Fabian M. Bufler. Transconductance. Monte Carlo method. Ballistic conduction · DOI: jjap › ted

Research Review PDF Free Download - DocPlayer.netdocplayer.net › Research-review-2003

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65 Leakage Currents and Charging Effects in SOI Devices Simulation of Nanoscale Double-Gate MOSFETs Andreas Schenk; ISE AG: Axel Erlebach Fabian Bufler ISE ...

應變工程在鍺電晶體之模擬研究 - NCHU Institution Repositoryir.lib.nchu.edu.tw › handle

ir.lib.nchu.edu.tw

[16]Fabian M. Bufler, Axel Erlebach, and Mohamed Oulmane, “Hole Mobility Model with Silicon Inversion Layer Symmetry, and Stress-Dependent Piezoconductance ...

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