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From atom-to-Device Explicit simulation Environment for ...
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Aktivitätstyp. Private for-profit entities (excluding Higher or Secondary Education Establishments). Kontakt Verwaltung. Axel Erlebach (Dr.). › project
th European Solid-State Device Research Conference (ESSDERC 2016) -...
estatedocbox.com
... Italy Empirical Ballistic Mobility Model for Drift-Diffusion Simulation Axel Erlebach 1, Helen Lee 2, Fabian Bufler 1 1 Synopsys Schweiz GmbH, Switzerland; ...
Modellierung und Simulation strahlensensitiver Halbleiterbauelemente
von Axel Erlebach, Shaker VerlagTaschenbuch
Berichte aus der Elektrotechnik [Shaker Verlag]
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Informationen zum Titel »Modellierung und Simulation strahlensensitiver Halbleiterbauelemente« von Axel Erlebach aus der Reihe »Berichte aus der ... › isbn
Modellierung und Simulation strahlensensitiver Halbleiterbauelemente...
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Modellierung und Simulation strahlensensitiver Halbleiterbauelemente. Front Cover. Axel Erlebach. Shaker, pages. 0 Reviews ...
Modellierung und Simulation strahlensensitiver ...
books.google.com
Axel Erlebach. Shaker, pages. 0 Reviews. Reviews aren't verified, but Google checks for and removes fake content when it's identified ... › books › about › Modellierung...
Process simulation of dopant diffusion and activation in germaniumonlinelibrary.wiley.com › doi › abs › pssa
onlinelibrary.wiley.com
· Axel Erlebach. Synopsys Switzerland LLCZurich, Switzerland. Search for more papers by this author.
[PDF] EU project DEEPEN to develop atom-to-device simulation ...semiconductor-today.com › features › PDF › SemiconductorToday_A...
semiconductor-today.com
Dr Axel Erlebach (Synopsys). EU project DEEPEN to develop atom-to-device simulation environment for photonic and electronic nanostructures.
[PDF] essderc Proceedings.comwww.proceedings.com › content
www.proceedings.com
Fabian Bufler, Luca Sponton, Axel Erlebach. Deterministic Simulation of SiGe HBTs Based on the Boltzmann ...
Comparative Simulation Study of the Different Sources of Statistical ...cir.nii.ac.jp › crid
cir.nii.ac.jp
Axel Erlebach · Asen Asenov. 収録刊行物. IEEE Transactions on Electron Devices. IEEE Transactions on Electron Devices 58 (12)
Effect of Underlap on Input Impedance, Gain and Noise Figure in ...www.ciitresearch.org › dsp › view › DSP
www.ciitresearch.org
Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian.M.BUFLER, Thomas FEUDEL, and wolfgang FICHTNER, “Simulation of ...
Enhancements to TCAD tools for advanced III-V semiconductor devices:...
docplayer.net
... III-V semiconductor devices: Material Parameter Database and Model Pre- Calibration for QDD Simulation Axel Erlebach and Helen Lee Synopsys, Inc . All.
Research Review PDF Free Download - DocPlayer.netdocplayer.net › Research-review-2003
docplayer.net
65 Leakage Currents and Charging Effects in SOI Devices Simulation of Nanoscale Double-Gate MOSFETs Andreas Schenk; ISE AG: Axel Erlebach Fabian Bufler ISE ...
TCAD methodology for simulation of GaN-HEMT power devices - Ghent...
lib.ugent.be
Stephan Strauss, Axel Erlebach, Tommaso Cilento, Marcon Denis, Steve Stoffels and 1 more Published in by IEEE. Gallium nitride (GaN) based High ...
[PDF] Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire ...www.semanticscholar.org › paper › Quasi-Ballistic-...
www.semanticscholar.org
... title={Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model}, author={Ko-Hsin Lee and Axel Erlebach and ...
[IEEE IEEE 26th International Symposium on Power Semiconductor...
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TCAD Methodology for Simulation of GaN-HEMT Power Devices Stephan Strauss, Axel Erlebach, Tommaso Cilento Synopsys Switzerland LCC ,
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