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Wolfgang PLOSS - Patents
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Inventors: Christoph Dirnecker, Wolfgang Ploss (Texas Instruments Deutschland Gmbh) Method and electronic device for a simplified ...
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TEXAS INSTRUMENTS DEUTSCHLAND GMBH
Dokumente zum Namen
Analog characteristics of metal-insulator-metal capacitors using...
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230 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 5, MAY Analog Characteristics of Metal–Insulator–Metal Capacitors Using PECVD Nitride Dielectrics Jeffrey...
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Patents Assigned to TEXAS INSTRUMENTS DEUTSCHLAND GNBH - Justia...
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Justia - Patents - Patents and Patent Application Resources
Sonstiges
DE B4 - Verfahren zur Herstellung einer Leitbahnanordnung...
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US *, 4 May 2001, 7 Nov 2002, Christoph Dirnecker, Zero mask high density metal/insulator/metal capacitor. US *, 11 Sep 2002, 27 Mar 2003, Kabushiki Kaisha Toshiba, Semiconductor device and method of fabricating the same. WO A2 *, 22 Jul 2002, 30 Jan 2003, Nutool, Inc.
US A - Method for fabricating a shielded multilevel integrated...
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A multilevel capacitor structure compatible with CMOS processing for use in switched capacitor circuits is disclosed. The capacitor structure has an...
US A1 - Printed wiring board with capacitor
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A printed wiring board includes a capacitor including a dielectric body having a first surface and a second surface, a first electrode provided on the...
Dirnecker - Patent applications
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Dirnecker. Christoph Dirnecker, Eching DE ... Patent applications by Christoph Dirnecker, Haag DE
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT - Patent application
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Inventors: Christoph Dirnecker (Eching, DE) Philipp Steinmann (Richardson, TX, US) ... Assignees: Texas Instruments Deutschland GmbH
US B2 - Low dielectric constant material reinforcement for...
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US A1 * Christoph Dirnecker Zero mask high density metal/insulator/metal capacitor. US B1 *
US B2 - Semiconductor device having ferroelectric substance...
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The invention provides a semiconductor device having a ferroelectric substance capacitor small in the occupying area and large in capacitance and a...
EP A2 - Method for manufacturing and structure of semiconductor...
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A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a...
WO A3 - Integrated circuit with same level different...
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An integrated circuit 100 contains three thin film resistors 106, 108, 110 over a dielectric layer The first resistor body 116 includes only a...
DE B4 - Integrierte Schaltungsanordnung mit Kondensator in...
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US *, 4 May 2001, 7 Nov 2002, Christoph Dirnecker, Zero mask high density metal/insulator/metal capacitor. US *, 1 Oct
DE A Method for producing an integrated circuit...
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Inventors, Christoph Dirnecker, Badih Cedar Park El-Kareh, Philipp Steinmann. Applicant, Texas Instruments Deutschland Gmbh. Export Citation, BiBTeX ...
US B2 - Metal-insulator-metal capacitor structure
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A capacitor having an electrically/conductive plate, an electrically conductive segmented electrically conductive plate segments and a second plurality...
US B2 - Integrated thinfilm resistor and MIM capacitor with a...
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An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the...
US A1 - Process for producing an integrated circuit...
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An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The...
US A1 - Three precision resistors of different sheet...
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An integrated circuit contains three thin film resistors over a dielectric layer. The first resistor body includes only a bottom thin film layer and the...
US A1 - Method for manufacturing and structure of...
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A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at...
WO A1 - Integrated thin film resistor and mim capacitor...
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Inventors, Christoph Dirnecker ... Texas Instruments Incorporated, Texas Instruments Deutschland Gmbh, Texas Instruments Japan Limited.
US B2 - Method and electronic device for a simplified...
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Inventores, Christoph Dirnecker, Wolfgang PLOSS. Beneficiário Original, Texas Instruments Deutschland Gmbh. Exportar citação, BiBTeX, EndNote, RefMan.
US B1 - Low loss capacitor structure Google Patents
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US *, 20 May 2004, 13 Jan 2005, Christoph Dirnecker, Integrated stacked capacitor and method of fabricating same. US *, 29 Mar ...
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