J. Rechmann und Wieck - Info zur Person

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Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by ...DiVA portal

liu.diva-portal.org

O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla,. H. W. Becker, M. Creatore, A. D. Wieck and A. Devi, Dalton. Trans ...

Characterization and application of alkanethiolate self- ...HAL Thèses

theses.hal.science

von V Zakusilova · — [70] J. Rechmann, M. Krzywiecki, and A. Erbe, Carbon–Sulfur Bond Cleavage During. Adsorption of Octadecane Thiol to Copper in Ethanol, ...

Surface Interactions for Atomic Layer Deposition and Etching ...ASU Library KEEP

keep.lib.asu.edu

von DC Messina · — [46] R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H.-W. Becker, M. Creatore,. A. D. Wieck and A. Devi, Low temperature growth of gallium oxide thin ... von KA Hatch · — [26] R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H. W. Becker, M. Creatore, A. D. Wieck, and A. Devi, Low Temperature Growth of Gallium Oxide.

Band Alignments and Interfaces in Kesterite PhotovoltaicsCORE

core.ac.uk

von JT Gibbon · · Zitiert von: 1 — R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H.-W. Becker, M. Creatore, A. D.. Wieck, and A. Devi, “Low temperature growth.

List of all publications | Group DeviRuhr-Uni-Bochum

imc.ruhr-uni-bochum.de

— R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H.-W. Becker, M. Creatore, A. D. Wieck and A. Devi, Dalton Trans , 46, — R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H.-W. Becker, M. Creatore, A. D. Wieck and A. Devi, Dalton Trans , 46,

Oxide–organic heterostructures: a case study of charge transfer...

pubs.rsc.org

M. Krzywiecki, L. Grządziel, P. Powroźnik, M. Kwoka, J. Rechmann and A. Erbe, Phys. Chem. Chem. Phys., 2018, 20, DOI: C8CP01976B.

Low temperature growth of gallium oxide thin films via plasma...

pubs.rsc.org

von R O'Donoghue · · Zitiert von: 47 — R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H. Becker, M. Creatore, A. D. Wieck and A. Devi, Dalton Trans., 2017, 46, DOI: C7DT03427J. von R O’Donoghue · · Zitiert von: 12 — R. O' Donoghue, D. Peeters, D. Rogalla, H. Becker, J. Rechmann, S. Henke, M. Winter and A. Devi, Dalton Trans., 2016, 45, DOI: C6DT03571J. › articlelanding

Low temperature growth of gallium TUE Research portalEindhoven University of Technology

research.tue.nl

von R O'Donoghue · · Zitiert von: 58 — R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H.-W. Becker, M. Creatore, A.D. Wieck, A.P.K. Devi.

Systematic molecular engineering of Zn-ketoiminates for ...RSC Publishing

pubs.rsc.org

von R O’Donoghue · · Zitiert von: 16 — R. O' Donoghue, D. Peeters, D. Rogalla, H. Becker, J. Rechmann, S. Henke, M. Winter and A. Devi, Dalton Trans., 2016, 45, DOI: C6DT03571J. von R O'Donoghue · · Zitiert von: 58 — R. O'Donoghue, J. Rechmann, M. Aghaee, D. Rogalla, H. Becker, M. Creatore, A. D. Wieck and A. Devi, Dalton Trans., 2017, 46, DOI: C7DT03427J.

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