J. Schaff und Hai Lu - Info zur Person

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Microelectronics Technology and Devices, SBMICRO 2004: Proceedings of...

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82, (2003) 1 1 Ricardo Asca'zubi, Ingrid Wilke, Kyle Denniston, Hai Lu and William J. Schaff, APL V. 84, N June INGAALAS MULTI-QUANTUM- ...

State-of-the-Art Program on Compound Semiconductors XLI and Nitride...

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[6] J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, S. X. Li, E.E. Haller, Hai Lu, William J. Schaff", Solid State Communications, (2003) [7] V. Cimalla, Ch. Forster, G. Kittler, L Popa, R. Kosiba, G. Ecke, O. Ambacher, R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, W. Schaff, Phys. Stat. Sol. (c) 7, (2003) [8] D.

Phys. Rev. B 66, (R) (2002) - Effects of the narrow band gap...

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J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, III, E. E. Haller, Hai Lu, and William J. Schaff. Phys. Rev. B 66, (R) – Published

UC Berkeley - eScholarshipeScholarship.org

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— Shan,. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley,. California Hai Lu and William J. Schaff. Department ... › content

Preparation of InN and InN-Based Heterostructures by ...springer.com

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von H Lu · · Zitiert von: 4 — Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy. Hai Lu,; William J. Schaff,; Jeonghyun Hwang & … Lester F ... › article

Publications - Solar Energy Materials Research GroupLawrence Berkeley National Laboratory (.gov)

emat-solar.lbl.gov

Shan, E. E. Haller, Hai Lu, and William J. Schaff, Electronic and Optical Properties of High Energy Particle-Irradiated In-rich InGaN Alloys, in Semiconductor ... › publica...

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