Chalcogenides: Metastability and Phase Change Phenomenagoogle.de
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A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Nature Mater. 3, 703 (2004) 2. A.V. Kolobov, A.S. Mishchenko, P. Fons, ...
Chalcogenides: Metastability and Phase Change Phenomena - Alexander...
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A.V. Kolobov, A.S. Mishchenko, P. Fons, S.M. Yakubenya, J. Tominaga, J. Phys. Condens. Matter 19, (2007) 3. J.L.F. Da Silva, A. Walsh, S.H. Wei, ...
Springer Handbook of Electronic and Photonic Materialsgoogle.de
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89, (2006) K.V. Mitrofanov, A.V. Kolobov, P. Fons, X. Wang, J. Tominaga, Y. Tamenori, T. Uruga, N. Ciocchini, ...
The Design and Application on Interfacial Phase‐Change ...John Wiley
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von J Tominaga · · Zitiert von: 36 — .jp. Systematic Materials Design Group, Nanoelectronic Research Institute, National Institute of Advanced Industrial ... von J Tominaga · · Zitiert von: 180 — Rev. Lett , 21, R. E. Simpson, P. Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, J. Tominaga, Nat. Nanotechnol , 6, H ...
Anomalous phase change process in [(GeTe)2/(Sb2Te3)]20 superlattice...
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... superlattice observed by coherent phonon spectroscopy. K. Makino, Y. Saito, K. Mitrofanov, J. Tominaga, A. V. Kolobov, T. Nakano, P. Fons, and M. Hase.
Phys. Rev. B 94, (2016) - Electronic excitation-induced...
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Electronic excitation-induced semiconductor-to-metal transition in monolayer MoTe2. A. V. Kolobov, P. Fons, and J. Tominaga. Phys. Rev. B
LOCAL STRUCTURE OF Ge-Sb-Te AND ITS ...Forum of chalcogeniders
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von AV Kolobov · · Zitiert von: 37 — A. V. Kolobov*, P. Fons, J. Tominaga, A. I. Frenkela, A. L. Ankudinovb, T. Urugac. Center for Applied Near-Field Optics Research, National Institute of ...
iDEP MRS Bulletin - RWTH PublicationsRWTH-Aachen
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A. V. Kolobov, P. Fons, A. I. Frenkel, A. L. Ankudinov, J. Tominaga, T. Uruga, Nat. Mater HegedXࡇs, S. R. Elliott, J. Tominaga, Appl. Phys. Lett.
Dynamic Response studies of GeTe devices for memory ...ScienceDirect
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von BG Sangeetha · · Zitiert von: 3 — J. Tominaga, A.V. Kolobov, P.J. Fons, X. Wang, Y. Saito, T. Nakano, M. Hase, S. Murakami, J. Herfort, Y. Takagaki. Sci. Technol. Adv. Mater., 16 ( ) ...
Understanding Phase-Change Memory Alloys from a ...Nature Journal
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von AV Kolobov · · Zitiert von: 53 — Understanding Phase-Change Memory Alloys from a Chemical Perspective. A.V. Kolobov,; P. Fons &; J. Tominaga. Scientific Reports volume 5, ...
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Crystalline GeTe-based phase-change alloys: Disorder in orderAcademia.edu
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12 .jp M. Krbal, A. V. Kolobov, P. Fons, J. Tominaga, S. R. Elliott, 1 Phase Change Materials: Science and Applications, ...
Interface effect and stress effect on Ge2Sb2Te5/Sb superlattice-like ...
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22, (2011) [CrossRef] [Google Scholar]; R.E. Simpson, P. Fons, A.V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, J. Tominaga, Nat. Nanotechnol. 6, 501 (2011) ...
Phase segregation in Pb:GeSbTe chalcogenide systemThe European Physical Journal Applied Physics
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9, G259 (2006) [CrossRef] [Google Scholar]; A.V. Kolobov, P. Fons, J. Tominaga, A.I. Frenkel, A.L. Ankudinov, S.N. Yannopoulous, K.S. Andrikopoulos, ...
Local structure of amorphous Ge-Sb-Te alloys: Ge umbrella flip vs....
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Local structure of amorphous Ge-Sb-Te alloys: Ge umbrella flip vs. DFT simulations. A. V. Kolobov, P. Fons, J. Tominaga. Research output: Contribution to ...
R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. ...mathnet.ru
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von RA Kastro · — Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov, “Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF ...
Soft X-ray XANES of N in ZnO:N - Why is doping so difficult?Elsevier
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P. Fons, H. Tampo, S. Niki, A. V. Kolobov, M. Ohkubo, J. Tominaga, S. Friedrich, R. Carboni, F. Boscherini. Research output: Contribution to journal ...
Strain engineering of atomic and electronic structures of few ...American Physical Society
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von AV Kolobov · · Zitiert von: 21 — Strain engineering of atomic and electronic structures of few-monolayer-thick GaN. A. V. Kolobov, P. Fons, Y. Saito, J. Tominaga, B. Hyot, ...
Structural and Dielectric Study of Thin Amorphous Layers of ...www.springerprofessional.de › structural-and-dielectric...
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Autoren: R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov.
Vol. 15, Number 5-6, Issue May-June 2013, Year 2013inoe.ro
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V. VEIKO , E. AGEEV , A.V. KOLOBOV , J. TOMINAGA Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp (2013).
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