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get to know the newest member of our NOMAD familyFAIR-DI
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Meet the developers of NOMAD CAMELS. Krieger_Michael. Michael Krieger. Weber_Heiko. Heiko Weber. Lehmeyer_Johannes. Johannes Lehmeyer Meet the developers of NOMAD CAMELS. Krieger_Michael. Michael Krieger. Weber_Heiko. Heiko Weber. Lehmeyer_Johannes. Johannes Lehmeyer.
Resultados de Búsqueda por Autor :: Descubridor Colecciones UAHCdescubridor.academia.cl › Author › Home
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por Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger , Heiko B Weber Publicado Cargando…
Publications | Institute for Theoretical PhysicsJohannes Kepler Universität Linz
www.jku.at
Maximilian Rühl , Johannes Lehmeyer , Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, and Heiko B. Weber, Removing the orientational ... Maximilian Rühl , Johannes Lehmeyer , Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, and Heiko B. Weber, Removing the orientational ...
Stark Tuning of the Silicon Vacancy in Silicon CarbideACS Publications
pubs.acs.org
von M Rühl · · Zitiert von: 41 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber. Removing the ... von M Rühl · · Zitiert von: 41 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber. Removing the ...
Saving energy by taking a close look inside transistorsScienceDaily
www.sciencedaily.com
— Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. An adapted method for analyzing 4H silicon carbide metal — Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. An adapted method for analyzing 4H silicon carbide metal ...
Conference Programicscrm-2023
icscrm-2023.org
— Th.D.6 Johannes Lehmeyer, Heiko Weber and Michael Krieger, Photoluminescence polarization of single TS centers in 4H-SiC (student paper). Th — Th.D.6 Johannes Lehmeyer, Heiko Weber and Michael Krieger, Photoluminescence polarization of single TS centers in 4H-SiC (student paper). Th ...
Wiki | Visit Heinz in Erlangen | OpenProject
op.fhi.mpg.de
witryna8 maj · Besuch von Heinz in Erlangen. Teilnehmer: Alexander Fuchs, Heinz Junkes, Michael Krieger, Johannes Lehmeyer, Matthias Popp, Willi Rösch, Heiko Weber Vorstellung LAPmeasurement (Matthias, Johannes) Vorstellung EPICS/Bluesky …
(a) Spectroscopy from the wafer edge: Spatially resolved ...ResearchGate
www.researchgate.net
Johannes Lehmeyer · Roland Nagy; [...] Heiko B Weber. We present a photoluminescence (PL) study of the recently ... Johannes Lehmeyer · Roland Nagy; [...] Heiko B Weber. We present a photoluminescence (PL) study of the recently ...
Active defects in MOS devices on 4H-SiC: A critical reviewOUCI
ouci.dntb.gov.ua
Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. https://doi.org s · Full text , Communications ... Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. https://doi.org s · Full text , Communications ...
Communications Physics Latest Journal's Impact IF - Trendacademic-accelerator.com
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Martin Hauck · Johannes Lehmeyer · Gregor Pobegen · Heiko B. Weber · Michael Krieger · Holographic vector field electron tomography of three-dimensional ... Martin Hauck · Johannes Lehmeyer · Gregor Pobegen · Heiko B. Weber · Michael Krieger · Holographic vector field electron tomography of three-dimensional ...
Program for Tuesday, September 19thEasyChair
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Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger. Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the ... Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger. Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the ...
Publications | KAIKAI GmbH
www.k-ai.at
Master's thesis, Chemnitz University of Technology, Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, and Michael Krieger. An adapted ... Master's thesis, Chemnitz University of Technology, Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, and Michael Krieger. An adapted ...
Verhandlungen der Deutschen Physikalischen Gesellschaftdpg-verhandlungen.de
www.dpg-verhandlungen.de
O , CAMELS - A Configurable Instrument Control Software for FAIR Data — •Alexander Fuchs, Johannes Lehmeyer, Michael Krieger, Heiko B. Weber, Patrick ... O , CAMELS - A Configurable Instrument Control Software for FAIR Data — •Alexander Fuchs, Johannes Lehmeyer, Michael Krieger, Heiko B. Weber, Patrick ...
An adapted method for analyzing 4H silicon carbide metal-oxide ...
cris.fau.de
witrynaMartin Hauck Chair of Applied Physics Johannes Lehmeyer Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics. How to cite. APA: Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). …
Evaluation of 4H-SiC MOSFET transfer characteristics using FAU
cris.fau.de
witrynaJohannes Lehmeyer Chair of Applied Physics Timon Citak Lehrstuhl für Experimentalphysik (Optik) Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics. Additional Organisation(s) FAU Profilzentrum …
Communications Physics IF 임팩트 팩터 경향 · 분석 · 계급Academic Accelerator
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... carbide metal-oxide-semiconductor field-effect transistors · Martin Hauck · Johannes Lehmeyer · Gregor Pobegen · Heiko B. Weber · Michael Krieger.
4DataCite
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Johannes Lehmeyer, Timon Citak, Heiko B. Weber & Michael Krieger. Dataset published via Lehmeyer, Johannes,Citak, Timon,Weber, Heiko B.,Krieger, Michael.
Color Centers Enabled by Direct Femto-Second Laser ...dntb.gov.ua
ouci.dntb.gov.ua
Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber.
Our Publications - KAI - Kompetenzzentrum Automobilwww.k-ai.at › publications › our-publications
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Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, and Michael Krieger. An adapted method for analyzing 4H silicon carbide ...
Quantitative Investigation of Near Interface Traps in 4H-SiC ...scientific.net
www.scientific.net
von M Hauck · · Zitiert von: 11 — Martin Hauck*, Julietta Weisse, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, M. Krieger. Keywords: Drain Current DLTS, Hall Effect in MOS Channel, ...
Program - EasyChaireasychair.org › smart-program › ICSCRM2023
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Zhengming Li, Johannes Lehmeyer, Heiko Weber and Michael Krieger. Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the ...
Removing the orientational degeneracy of the TS defect in ...Researcher App
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Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber. We present a photoluminescence (PL) ...
Verhandlungen der Deutschen Physikalischen Gesellschaftwww.dpg-verhandlungen.de › skm › part › session
www.dpg-verhandlungen.de
... Instrument Control Software for FAIR Data — •Alexander Fuchs, Johannes Lehmeyer, Michael Krieger, Heiko B. Weber, Patrick Oppermann, and Heinz Junkes.
[PDF] Removing the orientational degeneracy of the TS defect in 4H ...
oa.mg
... fields and strain by Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber on OA.mg. › work
Removing the orientational degeneracy of the TS defect in 4H–SiC ...opus4.kobv.de › frontdoor › index › index › docId
opus4.kobv.de
· Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber.
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| Matthias Weisser Michel Bockstedte Georg Urban | Heiko Weber Alexander Fuchs Martin Hauck | Maximilian Rühl Roland Nagy Johannes Dietz |
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