Johannes Lehmeyer und Martin Hauck - Info zur Person

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Saving energy by taking a close look inside transistorsScienceDaily

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— Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. An adapted method for analyzing 4H silicon carbide metal — Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. An adapted method for analyzing 4H silicon carbide metal ...

A Comprehensive Analytic Model of Accumulation-Mode ...Springer

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von SS Ahmed · — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Use our pre-submission checklist. Avoid common mistakes on your manuscript. References. von SS Ahmed · — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Use our pre-submission checklist. Avoid common mistakes on your manuscript. References.

Individual interface traps at the Si-SiO2 ...Springer

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von HH Mueller · · Zitiert von: 6 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise. Chapter © von HH Mueller · · Zitiert von: 6 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise. Chapter ©

POINT DEFECTS IN Si-SiO2 SYSTEMS: CURRENT ...Springer

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von SP Karna · Zitiert von: 48 — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. The future transistors. Article 16 August Wei Cao, Huiming Bu, … Kaustav Banerjee. Silicon Nanowire ... von SP Karna · Zitiert von: 48 — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. The future transistors. Article 16 August Wei Cao, Huiming Bu, … Kaustav Banerjee. Silicon Nanowire ...

An adapted method for analyzing 4H silicon carbide metal- ...Nature

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von M Hauck · · Zitiert von: 29 — An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Martin Hauck,; Johannes Lehmeyer, ... von M Hauck · · Zitiert von: 29 — An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Martin Hauck,; Johannes Lehmeyer, ...

Heat Liberation in Alloy-junction Silicon Diodes - Nature

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von LW DAVIES · — An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. 10 January Martin Hauck, Johannes Lehmeyer, … › letters

Quantified density of performance-degrading near ...Nature Journal

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von M Chaturvedi · · Zitiert von: 15 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. A steep switching WSe2 impact ionization field-effect transistor.

Active defects in MOS devices on 4H-SiC: A critical reviewOUCI

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Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. https://doi.org s · Full text , Communications ... Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger. https://doi.org s · Full text , Communications ...

Communications Physics Latest Journal's Impact IF - Trendacademic-accelerator.com

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Martin Hauck · Johannes Lehmeyer · Gregor Pobegen · Heiko B. Weber · Michael Krieger · Holographic vector field electron tomography of three-dimensional ... Martin Hauck · Johannes Lehmeyer · Gregor Pobegen · Heiko B. Weber · Michael Krieger · Holographic vector field electron tomography of three-dimensional ...

Publications | KAIKAI GmbH

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Master's thesis, Chemnitz University of Technology, Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, and Michael Krieger. An adapted ... Master's thesis, Chemnitz University of Technology, Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, and Michael Krieger. An adapted ...

An adapted method for analyzing 4H silicon carbide metal-oxide ...

cris.fau.de

witrynaMartin Hauck Chair of Applied Physics Johannes Lehmeyer Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics. How to cite. APA: Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). …