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Stark Tuning of the Silicon Vacancy in Silicon CarbideACS Publications
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von M Rühl · · Zitiert von: 41 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber. Removing the ... von M Rühl · · Zitiert von: 41 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber. Removing the ...
FAIRmatHome | CERN
accelconf.web.cern.ch
von H Junkes · Zitiert von: 1 — Alexander Fuchs and Johannes Lehmeyer (FAU) are im- plementing the new CECS system as part of the FAIRmat. Figure 9: Jetway IOC. project. Abdulrhman ... von H Junkes · Zitiert von: 1 — Alexander Fuchs and Johannes Lehmeyer (FAU) are im- plementing the new CECS system as part of the FAIRmat. Figure 9: Jetway IOC. project. Abdulrhman ...
Removing the orientational degeneracy of the TS defect in 4H ...IOPscience
iopscience.iop.org
von M Rühl · · Zitiert von: 8 — Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain, Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, ... von M Rühl · · Zitiert von: 8 — Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain, Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, ...
ISIS Target Station One Upgrade ProjectInstitute of Physics
iopscience.iop.org
von D Coates · · Zitiert von: 1 — Maximilian Rühl, Johannes Lehmeyer,. Roland Nagy et al. -. This content was downloaded from IP address on at 09: von D Wilcox · · Zitiert von: 2 — Maximilian Rühl, Johannes Lehmeyer,. Roland Nagy et al. -. This content was downloaded from IP address on at 01:
Open Access proceedings Journal of Physics: Conference ...iop.org
iopscience.iop.org
von SJ Thomas · · Zitiert von: 2 — Maximilian Rühl, Johannes Lehmeyer,. Roland Nagy et al. -. ISIS Target Station One Upgrade Project – · An overview of the development work.
POINT DEFECTS IN Si-SiO2 SYSTEMS: CURRENT ...Springer
link.springer.com
von SP Karna · Zitiert von: 48 — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. The future transistors. Article 16 August Wei Cao, Huiming Bu, … Kaustav Banerjee. Silicon Nanowire ... von SP Karna · Zitiert von: 48 — Martin Hauck, Johannes Lehmeyer, … Michael Krieger. The future transistors. Article 16 August Wei Cao, Huiming Bu, … Kaustav Banerjee. Silicon Nanowire ...
Individual interface traps at the Si-SiO2 ...Springer
link.springer.com
von HH Mueller · · Zitiert von: 6 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise. Chapter © von HH Mueller · · Zitiert von: 6 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise. Chapter ©
An adapted method for analyzing 4H silicon carbide metal- ...Nature
www.nature.com
von M Hauck · · Zitiert von: 29 — An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Martin Hauck,; Johannes Lehmeyer, ... von M Hauck · · Zitiert von: 29 — An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Martin Hauck,; Johannes Lehmeyer, ...
Quantified density of performance-degrading near ...Nature Journal
www.nature.com
von M Chaturvedi · · Zitiert von: 15 — 10 January Martin Hauck, Johannes Lehmeyer, … Michael Krieger. A steep switching WSe2 impact ionization field-effect transistor.
Open Access proceedings Journal of PhysicsInternet Archive Scholar
scholar.archive.org
von LG Jones · Zitiert von: 4 — Maximilian Rühl, Johannes Lehmeyer,. Roland Nagy et al. -. ISIS Target Station One Upgrade Project – · An overview of the development work. von LG Jones · Zitiert von: 4 — Maximilian Rühl, Johannes Lehmeyer,. Roland Nagy et al. -. ISIS Target Station One Upgrade Project – · An overview of the development work.
SiC MATERIAL PROPERTIES | International Journal of ...World Scientific Publishing
www.worldscientific.com
von G PENSL · · Zitiert von: 61 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser and Michel Bockstedte et al. 29 June | New Journal of Physics, Vol. 23, No. 7. von G PENSL · · Zitiert von: 61 — Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser and Michel Bockstedte et al. 29 June | New Journal of Physics, Vol. 23, No. 7.
An adapted method for analyzing 4H silicon carbide metal ...国立情報学研究所
cir.nii.ac.jp
von M Hauck · · Zitiert von: 24 — ... for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. DOI PDF Web Site 被引用文献2件. Martin Hauck · Johannes Lehmeyer. › crid
Quantitative Investigation of Near Interface Traps in 4H-SiC ...scientific.net
www.scientific.net
von M Hauck · · Zitiert von: 11 — Martin Hauck*, Julietta Weisse, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, M. Krieger. Keywords: Drain Current DLTS, Hall Effect in MOS Channel, ...
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Matthias Weisser Michel Bockstedte Georg Urban | Heiko Weber Alexander Fuchs Martin Hauck | Maximilian Rühl Roland Nagy Johannes Dietz |
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