John Mookken und Gangyao Wang - Info zur Person

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Electrical and thermal modeling and aging study of a ...Archive ouverte HAL

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von E Baghaz · · Zitiert von: 1 — Bayne, Gangyao Wang, John Mookken. fast andaccurate electro-thermal behavioral model of a commercial sic 1200v, 80 mΩ power mosfet. ieee,

GaN Power HEMT Tutorial: GaN Basics

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Gangyao Wang, John Mookken, Julius Rice, Marcelo Schupbach: Dynamic and Static. Behavior of Packaged Silicon Carbide MOSFETs in Paralleled Applications , ... › uploads › › Ga...

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(PDF) FAST AND ACCURATE ELECTRO-THERMAL ...Academia.edu

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... Gangyao Wang , John Mookken Electrical and Computer Engineering, Texas Tech University, Lubbock, TX USA Power Applications, Cree Inc., Durham, ...

Modelling parallel SiC MOSFETs: thermal self-stabilisation ...Typeset.io

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... packaged silicon carbide MOSFETs in paralleled applications. [...] Gangyao Wang 1, John Mookken 1, Julius Rice 1, Marcelo Schupbach 1• Institutions (1).

Dynamic and Static Behavior of Packaged - StudyLib

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Dynamic and Static Behavior of Packaged Silicon Carbide MOSFETs in Paralleled Applications Gangyao Wang, John Mookken, Julius Rice, Marcelo Schupbach Power ... › ... › Electronics

[PDF] Review of commercial SiC MOSFET models: Validity and ...

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Bejoy N. Pushpakaran, Stephen B. Bayne, Gangyao Wang, John Mookken. Silicon carbide. MOSFET. Spice · DOI: j.mejo › work › mixdes

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