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1. (WO ) LOW DEFECT DENSITY, SELF-INTERSTITIAL …TED SILICON

www.wipo.int

MEMC ELECTRONIC MATERIALS, INC. Inventors: FALSTER, Robert MARKGRAF, Steve, A. MCQUAID, Seamus, A. HOLZER, Joseph, C. MUTTI, Paolo JOHNSON, Bayard, K.

(97 (21

www.patent-de.com

(72) Erfinder: Falster, Robert, Milan, IT; Markgraf, Steve A.,. Chandler, Arizona , US; McQuaid, Seamus. A., Vitoria, ES; Holzer, Joseph C., St.

(WO ) LOW DEFECT DENSITY, SELF-INTERSTITIAL …TED ...

www.wipo.org

MARKGRAF, Steve, A.; (US). MCQUAID, Seamus, A.; (US). HOLZER, Joseph, C.; (US). MUTTI, Paolo; (IT). JOHNSON, Bayard, K.; (US). Agent: HEJLEK, Edward, J.; ...

Low defect density, ideal oxygen precipitating silicon - US Patent ...

www.patentstorm.us

Falster, Robert A. Holzer, Joseph C. Cornara, Marco · Gambaro, Daniela · Olmo, Massimiliano · Markgraf, Steve A. Mutti, Paolo · McQuaid, Seamus A. Johnson, ...

Vacancy …ted, defect-free silicon - US Patent Abstract

www.patentstorm.us

Inventors. Falster, Robert A. Holzer, Joseph C. Markgraf, Steve A. Mutti, Paolo Â· McQuaid, Seamus A. Johnson, Bayard K. ...

Low defect density, ideal oxygen precipitating silicon - Patent

data.epo.org

Falster, Robert Milan (IT); Markgraf, Steve A. Chandler, Arizona ( US); McQuaid, Seamus A Vitoria (ES); Holzer, Joseph C.

Patentee Index

svp.soic.indiana.edu

Falster, Robert A.; Holzer, Joseph C.; Cornara, Marco; Gambaro, Daniela; Olmo, Massimiliano; Markgraf, Steve A.; Mutti, Paolo; McQuaid, Seamus A.; and Johnson, Bayard K.

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