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Matthias Kaes,Martin Salinga · Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices · Journal of Applied ... Matthias Kaes,Martin Salinga · Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices · Journal of Applied ...
Loop | Matthias Elliot KaesLoop (Frontiers)
loop.frontiersin.org
Matthias Kaes · Christian Dellen · Martin Salinga. Frontiers in Physics. Published on 12 Dec views; XXdownloads; XXcitations. View All Publications Matthias Kaes · Christian Dellen · Martin Salinga. Frontiers in Physics. Published on 12 Dec views; XXdownloads; XXcitations. View All Publications
Publications | Lindenberg LabStanford University
lindenberglab.stanford.edu
... Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron Lindenberg, Phys. Rev. Lett., 117, (2016). APS Physics Research Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron Lindenberg, Phys. Rev. Lett., 117, (2016). APS Physics Research ...
ultrafast | Stanford Institute for Materials and Energy SciencesStanford Institute for Materials and Energy Sciences
simes.stanford.edu
Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander Von Hoegen, Matthias Wuttig, and Aaron Lindenberg. “Picosecond Electric ... Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander Von Hoegen, Matthias Wuttig, and Aaron Lindenberg. “Picosecond Electric ...
ContentWiley-VCH
application.wiley-vch.de
Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig. PCM 6: Ge2Sb2Te5 LINE TEST-STRUCTURES FOR PHASE-CHANGE. NON VOLATILE MEMORIES G. D'Arrigo ... Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig. PCM 6: Ge2Sb2Te5 LINE TEST-STRUCTURES FOR PHASE-CHANGE. NON VOLATILE MEMORIES G. D'Arrigo ...
Picosecond electric-field-induced threshold switching in ...arXiv
arxiv.org
von P Zalden · · Zitiert von: 72 — ... Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron Lindenberg. View a PDF of the paper titled Picosecond electric ... von P Zalden · · Zitiert von: 72 — ... Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron Lindenberg. View a PDF of the paper titled Picosecond electric ...
Materials Science authors/titles Feb arXivarXiv
arxiv.org
... Scott W. Fong, H.-S. Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron Lindenberg. › list › cond-mat....
Frontiers in Electronic MaterialsJohn Wiley
onlinelibrary.wiley.com
Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig. PCM 6: Ge2Sb2Te5 LINE TEST-STRUCTURES FOR PHASE-CHANGE. NON VOLATILE MEMORIES.
DS 39: Focus Session: Resistive Switching by Redox and ...dpg-verhandlungen.de
www.dpg-verhandlungen.de
Matthias Kaes, and Martin Salinga — 1. Physikalisches Institut. (IA), RWTH Aachen. Phase change materials are the essential ingredients for promising novel. Matthias Kaes, and Martin Salinga — 1. Physikalisches Institut. (IA), RWTH Aachen. Phase change materials are the essential ingredients for promising novel.
Amorphous and Disordered Materials - the Basis of New ...Springer
link.springer.com
von SR Ovshinsky · · Zitiert von: 25 — Open access 01 December Martin Rütten, Matthias Kaes, … Martin Salinga. Use our pre-submission checklist. Avoid common mistakes on your ... von SR Ovshinsky · · Zitiert von: 25 — Open access 01 December Martin Rütten, Matthias Kaes, … Martin Salinga. Use our pre-submission checklist. Avoid common mistakes on your ...
Dark-current relaxation in MnGa 2 Se 4 single crystalsSpringer
link.springer.com
von OV Tagiev · · Zitiert von: 2 — Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. Article Open access 16 August Matthias Kaes & Martin Salinga. Use our ... von OV Tagiev · · Zitiert von: 2 — Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. Article Open access 16 August Matthias Kaes & Martin Salinga. Use our ...
Effect of doping germanium oxide with metal ions on ...Springer
link.springer.com
von SN Kozlov · — Matthias Kaes & Martin Salinga. Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation. von SN Kozlov · — Matthias Kaes & Martin Salinga. Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation.
Dielectric Properties and AC Conductivity of Organic Films ...Springer
link.springer.com
von AAA Darwish · · Zitiert von: 10 — Matthias Kaes and Martin Salinga, Sci. Rep. 6, (2016). Article CAS Google Scholar. D. Yokoyama, J. Mater. Chem. 21, (2011).
Impact of defect occupation on conduction in amorphous ...Nature
www.nature.com
von M Kaes · · Zitiert von: 30 — Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. Matthias Kaes &; Martin Salinga. Scientific Reports ... von M Kaes · · Zitiert von: 30 — Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. Matthias Kaes &; Martin Salinga. Scientific Reports ...
Relation between bandgap and resistance drift in ...Nature
www.nature.com
von M Rütten · · Zitiert von: 66 — Martin Rütten, Matthias Kaes, Andreas Albert, Matthias Wuttig & Martin Salinga. IBM Research–ZurichRüschlikon, von M Rütten · · Zitiert von: 66 — Martin Rütten, Matthias Kaes, Andreas Albert, Matthias Wuttig & Martin Salinga. IBM Research–ZurichRüschlikon,
High-field electrical transport in amorphous phase-change ...OUCI
ouci.dntb.gov.ua
Authors: Matthias Kaes, Manuel Le Gallo, Abu Sebastian, Martin Salinga, Daniel Krebs. Abstract. Electrical transport in chalcogenide-based phase change ... Authors: Matthias Kaes, Manuel Le Gallo, Abu Sebastian, Martin Salinga, Daniel Krebs. Abstract. Electrical transport in chalcogenide-based phase change ...
Impact of defect occupation on conduction in amorphous ...National Institutes of Health (NIH) (.gov)
pubmed.ncbi.nlm.nih.gov
von M Kaes · · Zitiert von: 30 — Authors. Matthias Kaes , Martin Salinga. Affiliation. 1 I.Physikalisches Institut (IA), RWTH Aachen Universityvon M Kaes · · Zitiert von: 30 — Authors. Matthias Kaes , Martin Salinga. Affiliation. 1 I.Physikalisches Institut (IA), RWTH Aachen University
Impact of defect occupation on conduction in amorphous ...OUCI
ouci.dntb.gov.ua
Authors: Matthias Kaes, Martin Salinga. Abstract. AbstractStorage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years ... Authors: Matthias Kaes, Martin Salinga. Abstract. AbstractStorage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years ...
Relation between bandgap and resistance drift in ...National Institutes of Health (NIH) (.gov)
pubmed.ncbi.nlm.nih.gov
von M Rütten · · Zitiert von: 66 — Authors. Martin Rütten , Matthias Kaes , Andreas Albert , Matthias Wuttig , Martin Salinga. Affiliations. 1 Institute of Physics 1A ... von M Rütten · · Zitiert von: 66 — Authors. Martin Rütten , Matthias Kaes , Andreas Albert , Matthias Wuttig , Martin Salinga. Affiliations. 1 Institute of Physics 1A ...
Supplement Matthias Kaes,1, 2 Manuel Le Gallo,1 Abu SebastAIP.ORG
pubs.aip.org
Matthias Kaes,1, 2 Manuel Le Gallo,1 Abu Sebastian,1 Martin Salinga,2 and Daniel Krebs1. 1)IBM Research - Zurich, Rüschlikon, Switzerland. 2)I ... Matthias Kaes,1, 2 Manuel Le Gallo,1 Abu Sebastian,1 Martin Salinga,2 and Daniel Krebs1. 1)IBM Research - Zurich, Rüschlikon, Switzerland. 2)I ...
Dielectric Properties and AC Conductivity of Organic Films ...OUCI
ouci.dntb.gov.ua
Matthias Kaes and Martin Salinga, Sci. Rep. 6, (2016). https://doi.org srep31699; D. Yokoyama, J. Mater. Chem. 21, (2011). https://doi.org ... Matthias Kaes and Martin Salinga, Sci. Rep. 6, (2016). https://doi.org srep31699; D. Yokoyama, J. Mater. Chem. 21, (2011). https://doi.org ...
Journals | Page Catania HQ | - CNRcnr.it
hq.imm.cnr.it
... Richard Dronskowski, Wolfram HP Pernice, Harish Bhaskaran, Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig, G D'Arrigo, AM Mio, A Cattaneo, ... › publications
Journals | IMM Containercnr.it
www.imm.cnr.it
... Richard Dronskowski, Wolfram HP Pernice, Harish Bhaskaran, Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig, G D'Arrigo, AM Mio, A Cattaneo, ...
Impact of defect occupation on conduction in amorphous Ge2Sb2Te
www.semanticscholar.org
Matthias Kaes, Martin Salinga; Published in Scientific reports; DOI: srep Storage concepts employing the resistance of phase-change ...
Physical Review Letters - HighlightsAmerican Physical Society
journals.aps.org
... H.-S. Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron M. Lindenberg. Phys. Rev. › prl › hig...
Physical Review Letters - HighlightsPhysical Review Journals
journals.aps.org
Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron M. Lindenberg. Phys. Rev. Lett Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron M. Lindenberg. Phys. Rev. Lett
Picosecond Electric-Field-Induced Threshold Switching in ...National Institutes of Health (NIH) (.gov)
pubmed.ncbi.nlm.nih.gov
von P Zalden · · Zitiert von: 72 — ... Matthias Kaes , Martin Salinga , Alexander von Hoegen , Matthias Wuttig , Aaron M Lindenberg. Affiliations. 1 Stanford ... von P Zalden · · Zitiert von: 72 — ... Matthias Kaes , Martin Salinga , Alexander von Hoegen , Matthias Wuttig , Aaron M Lindenberg. Affiliations. 1 Stanford ...
High-field electrical transport in amorphous phase-change materials –...
cyberleninka.org
Similar topics of scientific paper in Physical sciences , author of scholarly article — Matthias Kaes, Manuel Le Gallo, Abu Sebastian, Martin Salinga, Daniel Krebs.
Nanosession: Phase Change Memories | IMM Container
www.imm.cnr.it
... Richard Dronskowski, Wolfram HP Pernice, Harish Bhaskaran, Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig, G D'Arrigo, AM ...
Publications - NEW | Advanced Photon SourceArgonne National Laboratory (.gov)
www.aps.anl.gov
— ... Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron M. LindenbergPhys. Rev. Lett — ... Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron M. LindenbergPhys. Rev. Lett. › Publica... › Sector-7
Role of activation energy in resistance drift of Semantic Scholar
www.semanticscholar.org
Martin Wimmer , Matthias Kaes , Christian Dellen and Martin Salinga*. Institute of Physics (1A): Physics of New Materials, RWTH Aachen ...
Verhandlungen der Deutschen Physikalischen Gesellschaft
www.dpg-verhandlungen.de
Drift of the voltage dependence of resistance in melt-quenched phase change memory cells — •Martin Wimmer, Matthias Kaes, and Martin Salinga — 1.
Physical Review Letters - Volume 117 Issue 6American Physical Society
journals.aps.org
— ... Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, and Aaron M. Lindenberg. Phys. Rev.
Publications | Advanced Photon SourceArgonne National Laboratory (.gov)
www.aps.anl.gov
— ... Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron M. LindenbergPhys. Rev. Lett — ... Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron M. LindenbergPhys. Rev. Lett.
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