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Preisverleihung im Forschungszentrum Rossendorf
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13. Dez – Wolfgang Anwand, Dr. Dieter Panknin, Dr. Wolfgang Skorupa, Thomas Schumann und Dr. Matthias Voelskow entwickelten in Zusammenarbeit mit der ...
Bücher
Verfasser Suchresultate
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Treffer von 48 für Suche: 'Matthias Voelskow', Suchdauer: 0.64s. Sortieren. Relevanz, Nach Datum, absteigend, Nach Datum, aufsteigend, Signatur ...
Matthias Voelskow | XanEdu Customization Platform
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Author: Matthias Voelskow. Results. Buried melting in germanium implanted silicon by millisecond flash lamp annealing American Institute of Physics
Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash...
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The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing....
Beeinflussung elektrischer und struktureller Parameter von...
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Jürgen Matthäi, Matthias Voelskow pages. 0 Reviewshttp://books.google.com/books/about/Beeinflussung_elektrischer_und_strukture.html?id= ...
Dokumente zum Namen
Matthias voelskow - Academia.edu
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Phys. Rev. Materials 3, (2019) - Superconductivity in...
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Slawomir Prucnal, Viton Heera, René Hübner, Mao Wang, Grzegorz P. Mazur, Michał J. Grzybowski, Xin Qin, Ye Yuan, Matthias Voelskow, ...
Phys. Rev. Applied 10, (2018) - Strain and Band-Gap...
journals.aps.org
Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian ...
Subsecond Annealing Of Advanced Materials Annealing By PDFrefinedjs.io/subsecond_annealing_of_advanced_materials_anneal...
refinedjs.io
subsecond thermal processing - chapter 1 historical aspects of subsecond thermal processing matthias voelskow, rossen a. yankov, and wolfgang skorupa ...
Wissenschaftliche Veröffentlichungen
Verfasser Suchresultate :: Katalog der Universitätsbibliothek Leipzig
katalog.ub.uni-leipzig.de
author_facet:"Matthias Voelskow" ... Person / Institution: Matthias Voelskow · Lothar Bischoff (2) · Jochen Teichert (2) · Wolfhard Möller (2) · Stephan Hausmann ...
Publications - cfaed
cfaed.tu-dresden.de
Reference. Slawomir Prucnal, Fang Liu, Matthias Voelskow, Lasse Vines, Lars Rebohle, Denny Lang, Yonder Berencén, Stefan Andric, Roman Boettger, ...
Publication List Marius Grundmann
home.uni-leipzig.de
Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly ...
Veröffentlichungen allgemein
Ultra-doped n-type germanium thin films for sensing in the...
core.ac.uk
By Slawomir Prucnal, Fang Liu, Matthias Voelskow, Lasse Vines, Lars Rebohle, Denny Lang, Yonder Berencen, Stefan Andric, Roman Boettger, Manfred Helm, ...
Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed...
link.springer.com
Bulk silicon devices are unlikely to be feasible for the planar 22 nm technological node due to commensurate degradation of carrier mobility. New types of...
Subsecond Annealing of Advanced Materials | SpringerLink
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The thermal processing of materials ranges from few femtoseconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing....
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Physics and Applications of Plasma-Based Ion Implantation Jason...
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Physics of Plasma-Based Ion Implantation Material is immersed in a plasma Material is immersed in a plasma Material is biased with a high negative voltage...
Matthias Voelskow
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Matthias Voelskow. Details · Publications ... Matthias Voelskow, Aloke Kanjilal, Wolfgang Skorupa · Current Applied Physics 10 ,
HZDR-Preisträger ab Helmholtz-Zentrum Dresden-Rossendorf, HZDR
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Das HZDR vergibt jährlich Preise für herausragende Forschungsarbeiten, innovative Technologien und die besten Promotionen. Der Preis für...
(PDF) Ion beam synthesis by tungsten-implantation into 6H-silicon...
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Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
Publications - Helmholtz-Zentrum Dresden-Rossendorf, HZDR
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101) Xin Ou, Reinhard Kögler, Hong-Bo Zhou, Wolfgang Anwand, Jörg Grenzer, René Hübner, Matthias Voelskow, Maik Butterling, Shengqiang Zhou, and Wolfgang Skorupa, Release of helium from vacancy defects in yttria-stabilized zirconia under irradiation, Phys. Rev. B 86, (2012).
(PDF) Ion implantation-induced damage depth profile ...www.academia.edu › Ion_implantation-induced_damage_depth_profile...
www.academia.edu
Matthias voelskow. NIM B Beam ... SiC, because of a very high chemical resistance of this [15] SiCrystal AG, Erlangen, Germany. Available from: <http:
(PDF) Radiation damage and annealing behaviour of Ge +-implanted SiC...
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Matthias voelskow. s __ Nuclear Instruments and Methods in Physics Research B I20 (I 996) I80 __ LiYlOk+il B Be a m lnt e a c t ions ...
Materials | Free Full-Text | Ion-Beam-Induced Atomic Mixing in Ge,...
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by Manuel Radek 1, Bartosz Liedke 2, Bernd Schmidt 2, Matthias Voelskow 2, Lothar Bischoff 2, John Lundsgaard Hansen 3, Arne Nylandsted Larsen 3, ...
2006
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полупроводники, лазерная физика, наноэлектроника, квантовая электроника, оптоэлектроника, лазерная физика
Download e-book for kindle: Subsecond Annealing of Advanced...
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Download e-book for kindle: Subsecond Annealing of Advanced Materials: Annealing by by Matthias Voelskow, Rossen A. Yankov (auth.), Wolfgang.
Pressemitteilung vom zur Verleihung der FZR ...www.hzdr.de › Cms
www.hzdr.de
Wolfgang Anwand, Dr. Dieter Panknin, Dr. Wolfgang Skorupa, Thomas Schumann und Dr. Matthias Voelskow entwickelten in Zusammenarbeit ...
Publications FWIM - Helmholtz-Zentrum Dresden-Rossendorf ...www.hzdr.de › Cms
www.hzdr.de
Slawomir Prucnal, Viton Heera, René Hübner, Mao Wang, Grzegorz P. Mazur, Michał J. Grzybowski, Xin Qin, Ye Yuan, Matthias Voelskow, Wolfgang Skorupa, ...
Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means...
pure.au.dk
author = "Manuel Radek and Bartosz Liedke and Bernd Schmidt and Matthias Voelskow and Lothar Bischoff and Hansen, {John Lundsgaard} and Larsen, { Arne ...
Computer simulation and RBS/C studies of high-dose N+ and Al+...
www.spiedigitallibrary.org
SPIE Digital Library Proceedings
Dwell-time effects in focused ion beam synthesis of cobalt...
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Matthias Voelskow. Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, P.O Box , D Dresden, ...
PPT - Physics and Applications of Plasma-Based Ion Implantation...
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Physics and Applications of Plasma-Based Ion Implantation. Jason Olejarz May 4, Basics of Conventional Ion Implantation. Process for altering material...
Beschwerde: Startguthaben wird nicht gewährt (Prepaid SIM)
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Nach Aktivierung der SIM-Karte mit dem Tarif ja! mobil smart S hätte mir laut AGB ein Startguthaben von 10€ zugestanden. Dieses wurde aber nicht...
Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed...
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Bulk silicon devices are unlikely to be feasible for the planar 22 nm technological node due to commensurate degradation of carrier mobility. New
Historical Aspects of Subsecond Thermal Processing |...
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From atom bomb simulation to advanced semiconductor processing—what a bellicose-to-peaceful bottom-up approach this research field experienced.
(PDF) Superconducting State in a Gallium-Doped Germanium Layer at Low...
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Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures
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