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VDE veranstaltet 7. Internationale Konferenz zur ...
www.innovations-report.de
— SiC and GaN Devices – Competition or Coexistence?, Nando Kaminski, Uni Bremen, und Oliver Hilt, FBI Berlin, Deutschland › sonderthemen › vd...
E.G.O., Infineon Technologies, University of Bremen announced their...
news.europawire.eu
University of Bremen Prof. Dr.-Ing. Nando Kaminski Institute for Electrical Drives, Power Electronics and Devices (IALB) Phone: +
Research for DC power grids: Technological basis set for high...
www.infineon.com
· www.siemens.com. University of Bremen Institute for Electrical Drives, Power Electronics, and Devices (IALB) Prof. Dr.-Ing. Nando Kaminski
Events for
r8.ieee.org
Location: Seminar Room Darlington, Elevator B, Floor 4, Electrum Prof. Dr.-Ing. Nando Kaminski Institute for Electrical Drives, Power Electronics, and Devices (IALB) University of Bremen Semiconductor chips made from the wide band-gap (WBG) materials silicon carbide (SiC) or gallium nitride (GaN) are already ...
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