Oskar Baumgartner und Silicon - Info zur Person

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[ ] Bandstructure and mobility variations in p-type Silicon...

arxiv.org

· Authors:Neophytos Neophytou, Oskar Baumgartner, Zlatan Stanojevic, Hans Kosina · Download PDF. Abstract: The sp3d5s*-spin-orbit-coupled ...

Subband engineering in n-type silicon nanowires using strain and...

www.scienceopen.com

Authors: Zlatan Stanojević*, Viktor Sverdlov, Oskar Baumgartner, Hans Kosina. Publication date (PMC-release): 1 April Publication date (Print): April

Solid-State Electronics | Selected papers from EUROSOI |...

www.sciencedirect.com

Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs. Dmitri Osintsev, Oskar Baumgartner, Zlatan Stanojevic, Viktor ...

Band Structure Lab: Citations - nanoHUB.org - Resourcesnanohub.org › resources › bandstrlab › citations

nanohub.org

· N. Neophytou, Oskar Baumgartner, Zlatan Stanojevic, H. Kosina, (2013), "Bandstructure And Mobility Variations In P-type Silicon Nanowires ...

MOS-AK Workshop Silicon Valley 2018www.mos-ak.org › silicon_valley_2018

www.mos-ak.org

Zlatan Stanojevic, Oskar Baumgartner, Franz Schanovsky, Ferdinand Mitterbauer, Georg Strof, Christian Kernstock, Markus Karner Global TCAD Solutions ...

Neophytos Neophytou » Journal Publications

nneophytou.com

[37] Neophytos Neophytou, Oskar Baumgartner, Zlatan Stanojevic, and Hans Kosina, “Bandstructure and Mobility Variations in p-type Silicon Nanowires under ...

Subband engineering in n-type silicon nanowires using strain and ...pubmed.ncbi.nlm.nih.gov › ...

pubmed.ncbi.nlm.nih.gov

Authors. Zlatan Stanojević , Viktor Sverdlov, Oskar Baumgartner, Hans Kosina. Affiliation. 1 Institute for Microelectronics, TU Wien, -29,

Subband splitting and surface roughness induced spin relaxation in ...www.infona.pl › resource

www.infona.pl

... roughness induced spin relaxation in (001) silicon SOI MOSFETs. Dmitri Osintsev, Oskar Baumgartner, Zlatan Stanojevic, Viktor Sverdlov, Siegfried Selberherr.

Tunneling in the Cloud — GTS Pushing Limits of TCAD in 4 - EDACafewww10.edacafe.com › nbc › articles › Tunneling-Cl...

www10.edacafe.com

Thu, Sept. 10: Paper Session 11: Silicon Devices. 3:30 PM Oskar Baumgartner Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors ...

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