Pouya Hashemi und Ibm - Info zur Person

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Pouya Hashemi on LinkedIn: Entering the club of 100 plus IBM ...

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High Mobility Materials for CMOS Applicationsgoogle.ch

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... Switzerland Pouya Hashemi (205), IBM Corporation, Yorktown Heights, NY, United States Adrian Ionescu (281), EPFL, Lausanne, Switzerland Kelin Kuhn (1), ...

SiGe, Ge, and Related Compounds: Materials, Processing, and ...google.ch

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... USA) FET Committee A. Thean, Chair (National Univ. of Singapore) Gong Xiao (National Univ. of Singapore) Pouya Hashemi (IBM, USA) WilmanTsai (TSMC, ...

Alle Infos zum Namen "Pouya Hashemi"

‪Pouya Hashemi‬ - ‪Google Scholar‬

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‪IBM Manager and Senior Research Scientist‬ - ‪‪อ้างอิงโดย 4,422 รายการ‬‬ - ‪Integrated Circuit‬ - ‪Semiconductor Memory‬ - ‪MRAM‬ - ‪Silicon and Germanium...

‪Pouya Hashemi‬ - ‫الباحث العلمي من Google‬

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‪IBM Manager and Senior Research Scientist‬ - ‪‫تم الاقتباس 4,422 مرة‬‬ - ‪Integrated Circuit‬ - ‪Semiconductor Memory‬ - ‪MRAM‬ - ‪Silicon and Germanium...

日本学術振興会シリコン超集積システム第165委員会 - d. International Symposium on Device...

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Pouya Hashemi, IBM Watson. 14: :50, Challenge and Overcome of process limits on mass production of advanced memories. Jong Chul ...

Pouya Hashemi - Credly

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Pouya Hashemi received his Ph.D. degree (with honor) from MIT in He is currently a manager, research staff member, and master inventor at IBM research ...

Pouya Hashemi - Publications

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IBM Research

Pouya Hashemi - IBM Research

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プロフィール

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Pouya Hashemi. IBM Manager and Research Staff Member. 確認したメールアドレス: us.ibm.com. 引用元 Integrated Circuit Semiconductor Memory ...

‪Pouya Hashemi‬ - ‪Google 学术搜索‬

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‪IBM Manager and Research Staff Member‬ - ‪‪引用次数：4,332 次‬‬ - ‪Integrated Circuit‬ - ‪Semiconductor Memory‬ - ‪MRAM‬ - ‪Silicon and Germanium Transistors‬

Invited Speakers

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... scalability will be discussed in this talk <p>FET</p>. Pouya Hashemi - 'Strained SiGe on Insulator FinFETs: a P-FET Candidate for 10nm Node' - IBM.

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