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Programme,Conference Schedule,EDS IMAPS CS 2012
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EDS IMAPS CS Conference Schedule. p { width: 780px; } .style1 {color: White; padding: 5px 5px 5px 10px; border: 1px solid # ; background-color:
Netzwerk-Profile
B Hadam | AceMap
acemap.openacademic.ai
M Heuser, M Baus, B Hadam, O Winkler, Bernd Spangenberg, Ralf Granzner, M C Lemme, H Kurz Concept of Floating Dot Memory Transistors on Silicon on insulator Substrate · http://linkinghub.elsevier.com/retrieve/pii/S X · Microelectronic Engineering - O Winkler, F Merget, M Heuser, B Hadam, ...
V M Polyakov | AceMap
acemap.openacademic.ai
Ralf Granzner, V M Polyakov, V Cimalla, Oliver Ambacher, Frank Schwierz High Voltage Stress Time Dependent Dispersion Effects in Algan Gan Hemts · http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber= _ M Wespel, M Dammann, V M Polyakov, R Reiner, P Waltereit, Brigitte Weiss, R Quay, ...
Bücher
Low-Dimensional Functional Materials | downloadaf.de1lib.org › book
ps.de1lib.org
243 Atabek E. Atamuratov, Ralf Granzner, Mario Kittler, Zuhra Atamuratova, Mahkam Halillaev, and Frank Schwierz 21 Anyon Bosonized 2D Fermions or a Single ...
beluga - Exemplare: Nanometer-MOSFETsfür Digital- und...
beluga.sub.uni-hamburg.de
Nanometer-MOSFETsfür Digital- und Hochfrequenzanwendungen ; vorgelegt von Ralf Granzner. Kein Bild verfügbar. Bibliographische Detailangaben. 1.
Theoretical Investigation of Trigate AlGaN/GaN HEMTs | Alsharef ...ur.booksc.eu › book
ur.booksc.eu
10, OCTOBER Theoretical Investigation of Trigate AlGaN/GaN HEMTs Mohamed A. Alsharef, Ralf Granzner, and Frank Schwierz, Senior Member, ...
GaN-Based Tri-Gate High Electron Mobility Transistors. - Erdin Ture -...
books.google.de
My special thanks is conveyed to our partners at the Technical University of Ilmenau, PD Dr. Frank Schwierz, Dr. Ralf Granzner, and Mohamed Alsharef.
Dokumente zum Namen
Granzner, Ralf [WorldCat Identities]
worldcat.org
Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen by Ralf Granzner( ) 3 editions published in in German and held by 21 WorldCat member ...
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility...
www.ieeeexplore.ws
IEEE Xplore, delivering full text access to the world's highest quality technical literature in engineering and technology. | IEEE Xplore
Empirical Model for the Effective Electron Mobility in Silicon...
ieee.ns02.info
Ralf Granzner ; Fachgebiet Festkörperelektronik, Technische Universität Ilmenau, Ilmenau, Germany ; Vladimir M. Polyakov ; Christian Schippel ; Frank Schwierz.
(PDF) Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs...
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 12, DECEMBER Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs Ralf Granzner, Stefan...
Wissenschaftliche Veröffentlichungen
DFG - GEPRIS - Experimentelle und theoretische Untersuchung der ...
gepris.dfg.de
Entwurf und Optimierung Elektronenstrahllithographie–basierter Herstellungspro-zesse für die anwendungsorientierte Nanotechnologie, Dissertation, Verlag Dr. Hut (2013) J. Bolten; Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen, Dissertation, Technische Universität Ilmenau, Ralf Granzner
Applied Surface Science | Progress in Applied Surface, Interface and...
www.sciencedirect.com
Juraj Racko, Peter Benko, Miroslav Mikolášek, Ralf Granzner, ... Juraj Breza. Pages : Download PDF. Article preview. select article A ...
Ralf Granzner - dblpdblp.org › Persons
dblp.org
Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture , Rüdiger Quay , Oliver Ambacher: Performance of tri-gate AlGaN/GaN HEMTs.
Veröffentlichungen allgemein
Benchmarking of straddle-Gate MOSFETs - CORE Reader
core.ac.uk
Institut für Medientechnik an der TU Ilmenau. Dipl.-Ing. Christian Weigel. Dipl Technische Universität llmenau (Thür.) Ing. Ralf Granzner. PD Dr.-Ing.
Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by...
link.springer.com
Atabek E. Atamuratov, Ralf Granzner, Mario Kittler, Zuhra Atamuratova,. Mahkam Halillaev, and Frank Schwierz. Abstract In this work, the influence of a single ...
Trap-assisted tunnelling current in MIM structures | SpringerLink
link.springer.com
Trap-assisted tunnelling current in MIM structures. Authors; Authors and affiliations. Juraj RackoEmail author; Miroslav Mikolášek; Ralf Granzner; Juraj Breza; Daniel Donoval; Alena Grmanová; Ladislav Harmatha; Frank Schwierz; Karol Fröhlich. Juraj Racko. 1. Email author; Miroslav Mikolášek. 1. Ralf Granzner. 2.
Sonstiges
Ralf Granzner - Biblioteka Nauki - Yadda
yadda.icm.edu.pl
Informacje o twórcy. Adres strony. Kopiuj. Twórca. Ralf Granzner. Nazwisko. Granzner. Imię. Ralf. Role. autor (szukaj). Adres. Dane kontaktowe ...
Ralf Granzner
www.infona.pl
Ralf Granzner, Frank Schwierz · th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) >
Electronics | Free Full-Text | Simulation of 50-nm Gate Graphene...
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Ralf Granzner. ,. Jörg Pezoldt. and. Frank Schwierz. *. Institut für Mikro-und Nanoelektronik, Technische Universität Ilmenau, PF , Ilmenau, ...Missing: Thür" | Must include:Thür" Ralf Granzner. ,. Jörg Pezoldt. and. Frank Schwierz. *. Institut für Mikro-und Nanoelektronik, Technische Universität Ilmenau, PF , Ilmenau, ... Missing: Thür" | Must include:Thür"
JEEEC
iris.elf.stuba.sk
Ladislav HARMATHA – Ralf GRANZNER – Frank SCHWIERZ: COUPLED DEFECT LEVEL RECOMBINATION IN THE P-N JUNCTION ; DOI: v [abstract] [full-paper]. Peter MRAK – Anton BIASIZZO – Franc NOVAK: ON MEASUREMENT UNCERTAINTY OF ADC NONLINEARITIES IN ...
KARLA - Katalogportal der UB Kassel: Intern:...
hds.hebis.de
Titel: Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen [Elektronische Ressource] / Ralf Granzner. Gutachter: Max Christian Lemme ; Hannes ...
Coupled Defect Level Recombination in the P—N Junction - Sciendosciendo.com › article
sciendo.com
Peter Benko,Peter Benko. Ondrej Gallo,Ondrej Gallo. Ladislav Harmatha,Ladislav Harmatha. Ralf Granzner andRalf Granzner. Frank SchwierzFrank Schwierz ...
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On ...www.cambridge.org › core › journals › article › cub...
www.cambridge.org
Elena Tschumak ,. Florentina Niebelschüetz ,. W. Jatal ,. Joerg Pezoldt ,. Ralf Granzner ,. Frank Schwierz and. Klaus Lischka. Show author details ...
Verhandlungen der Deutschen Physikalischen Gesellschaft
www.dpg-verhandlungen.de
Mathematische Modellierung charakteristischer Rauscheinflüsse auf MOSFET-Transistoren — •Sonja Engert, Ralf Granzner, Frank Schwierz ...
IEEE International Microwave Symposium | Technical Sessions2017.ims-ieee.org › technical-programs2 › com_technicalsessions
2017.ims-ieee.org
Erdin Ture, Peter Brückner, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rüdiger Quay, Oliver Ambacher. Presenter: Erdin Ture, Fraunhofer Institute for ...
Citations: Browse the list of available citations - nanoHUB.org
nanohub.org
Ralf Granzner, Frank Schwierz, Vladimir Polyakov, (2007), "An Analytical Model for the Threshold Voltage Shift Caused by ...
KLEIN IN ILMENAU GANZ GROß - PDF Kostenfreier Download
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10 UNIPOLITIK Foto: ari Thüringer Zentrum für Maschinenbau TU Ilmenau ... Ing. Ralf Granzner, Wissenschaftsgebiet Mikro- und Nanoelektronik Dipl.
COMPARISON OF A STANDARD AND A SCHOTTKY DUAL GATE MOSFET - PDF
docplayer.net
1 Journal of ELECTRICAL ENGINEERING, VOL. 59, NO. 2, 2008, COMPARISON OF A STANDARD AND A SCHOTTKY DUAL GATE MOSFET Juraj Racko Ralf Granzner Frank Schwierz Juraj Breza Daniel Donoval Ondrej Kučera Peter Pinteš The article presents modelling and simulation of the electrical properties of ...
Cross Reference Logo Citations to this article as recorded by ...pubs.rsc.org › content › forwardlinks
pubs.rsc.org
Zhansong Geng, Bernd Hähnlein, Ralf Granzner, Manuel Auge, Alexander A. Lebedev, Valery Y. Davydov, Mario Kittler, Jörg Pezoldt and Frank Schwierz.
nanoHUB.org - Citations: Browse the list of available citations
nanohub.org
nanoHUB.org is designed to be a resource to the entire nanotechnology discovery and learning community.
COUPLED DEFECT LEVEL RECOMBINATION IN THE PN ...iris.elf.stuba.sk › cgi-bin › jeeec
iris.elf.stuba.sk
Ladislav HARMATHA – Ralf GRANZNER – Frank SCHWIERZ. The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at ...
On the suitability of DD and HD models for the simulation of...
www.infona.pl
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs. Ralf Granzner, V.M. Polyakov, F. Schwierz, M. Kittler, T. Doll.
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and...
www.cambridge.org
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation - Volume Donat J. As, Elena Tschumak, Florentina...
EDS IMAPS CS Conference Schedulewww.imaps.cz › eds2009
www.imaps.cz
Juraj Breza, Juraj Racko, Alena Grmanová, Ladislav Harmatha, Juraj Breza, Frank Schwierz, Ralf Granzner, Karol Fröhlich, Daniel Donoval, Slovak University of ...
Electron mobility in silicon nanowire mosfets
www.infona.pl
Electron mobility in silicon nanowire mosfets. more. COLLAPSE. Ralf Granzner, Frank Schwierz · Details · Contributors · Bibliography · Quotations · Similar ...
EDS IMAPS CS Conference Schedule
www.imaps.cz
Juraj Racko, Alena Grmanova, Ralf Granzner, Peter Benko, Ladislav Harmatha, Frank Schwierz, Juraj Breza, Slovak University of Technology, Bratislava, ...
Verwandte Suchanfragen zu Ralf Granzner
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