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Phase-change Thin Films: Resistance Switching and Isothermal...
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Title, Phase-change Thin Films: Resistance Switching and Isothermal Crystallization Studies. Author, Ramanathaswamy Pandian. Publisher, University of Groningen] [Host], ISBNExport Citation, BiBTeX EndNote RefMan ...
Polarity-dependent resistance switching in GeSbTe phase ...DOKUMEN.TIPS
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Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation Ramanathaswamy Pandian, ...
Crystal Growth Rates in Doped SbxTe Fast-Growth Phase-Change Films...
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Isothermal crystallization of doped SbxTe fast-growth phase-change films was investigated using transmission electron microscopy with in situ heating. SbxT
(PDF) Polarity-dependent resistance switching in GeSbTe phase-change...
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We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in...
University of Groningen. Phase-change thin films Pandian ...docplayer.net › University-of-groninge...
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Influence of electron beam exposure on crystallization of phase-change materials Ramanathaswamy Pandian, B. J. Kooi, J. T. M. De Hosson and J. Appl. Phys.
Crystal Growth Rates in Doped SbxTe Fast-Growth Phase-Change ...www.cambridge.org › core › journals › article › cry...
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... Phase-Change Films Studied with Transmission Electron Microscopy - Volume Bart J. Kooi, Ramanathaswamy Pandian, Jeff Th. M. De Hosson.
Crystal Growth Rates in Doped SbxTe Fast-Growth Phase-Change Films...
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Crystal Growth Rates in Doped SbxTe Fast-Growth Phase-Change Films Studied with Transmission Electron Microscopy - Volume 1072
Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films -...
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DOI: adma Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films** By Ramanathaswamy Pandian, Bart J. Kooi,* George Palasantzas,...
Reversible Electrical Resistance Switching in GeSbTe Thin Films ...www.cambridge.org › core › journals › article › rev...
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... Approach without Amorphous-Crystalline Phase-Change. Published online by Cambridge University Press: 01 February Ramanathaswamy Pandian ,.
Reversible Electrical Resistance Switching in GeSbTe Thin Films: An...
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Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change - Volume 1071
Phase-change thin films - Research database - University of ...www.rug.nl › publications › export
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... Antimoon, Geleidingsvermogen, Dunne films, Kristallisatie, Kristalvorming, kristalgroei, kristaldislocaties en kristald",. author = "Ramanathaswamy Pandian",.
Materials science and technology for nonvolatile memories : symposium...
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... Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change / Ramanathaswamy Pandian, ...
Polarity-dependent resistance switching in GeSbTe phase-change thin...
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Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation Ramanathaswamy Pandian, Bart J....
University of Groningen - PDF Free Download
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2 JOURNAL OF APPLIED PHYSICS 101, Influence of electron beam exposure on crystallization of phase-change materials Ramanathaswamy Pandian, Bart J.
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