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Josef Lutz | AceMap
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Recommendation. Relation Based: Josef Lutz, Josef Lutz. Insterests Based: Josef Lutz, Heinz Mitlehner, Uwe Kellnerwerdehausen, Frank Hille, Josef Lutz, Pavel Hazdra, Martin Ruff, Franz Hirler, Johannes G Laven, Reiner Barthelmess, J Lutz, S Popelka, Jochen Sack, J D A Bauer, Rajnish K Sharma. Content Based:.
Interessen
Zweiter Blick: Thomas Knura und Reiner Barthelmess ...Oberberg-Aktuell
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... Reiner Barthelmess nahmen in ihrem Buch "Schicht" die oberbergische Industrie und Handwerksbetriebe unter die Lupe, und zwar mit Blick auf früher und heute Reiner Barthelmess nahmen in ihrem Buch "Schicht" die oberbergische Industrie und Handwerksbetriebe unter die Lupe, und zwar mit Blick auf früher und heute.
Infineon Technologies Ag patent inventors (2010) - FreshPatents.comstks.freshpatents.com › Infineon-Technologies-Ag-i...
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Reiner Barthelmess · Reinhard Ploss · Reinhard Rueckriem · Reinhard Stengl · Reinhold Bayerer · Remi Hardy · Riccardo Pittassi · Richard Sbuell.
Zweiter Blick: Thomas Knura und Reiner Barthelmess nahmen Industrie...
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Internetzeitung für die Region
Reiner Barthelmess - Patents
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Reiner Barthelmess patents Recent bibliographic sampling of Reiner Barthelmess patents listed/published in the public domain by the USPTO (USPTO Patent Application
Business-Profile
Reiner BARTHELMESS | R&D | Research profileResearchGate
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Reiner Barthelmeß. Infineon Technologies Bipolar GmbH & Co KG · R&D ... Join ResearchGate to contact this researcher and connect with your scientific community. Reiner Barthelmeß. Infineon Technologies Bipolar GmbH & Co KG · R&D ... Join ResearchGate to contact this researcher and connect with your scientific community.
patentbuddy: Reiner Barthelmess
INFINEON TECHNOLOGIES AG
Bücher
Energy Storage, Distribution, Use and Climate ImpactOxford Academic
academic.oup.com
Huang, Hartmut, Markus Uder, Reiner Barthelmess, and Joerg Dorn. “Application of high power thyristors in HVDC and FACTS systems.” In 17th Conference of ... Huang, Hartmut, Markus Uder, Reiner Barthelmess, and Joerg Dorn. “Application of high power thyristors in HVDC and FACTS systems.” In 17th Conference of ...
Official Gazette of the United States Patent and Trademark ...google.com
books.google.com
... Reiner Barthelmess , Eltmann , all of Germany , assignors to Infineon Technologies AG , Munich , Germany Continuation of application No. PCT / DE
Physics and Technology of Sustainable Energygoogle.com
books.google.com
... Reiner Barthelmess, and Joerg Dorn. “Application of high power thyristors in HVDC and FACTS systems.” In 17th Conference of Electric Power Supply Industry ...
USPTO Image File Wrapper Petition Decisions 0331google.com
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... Reiner Barthelmess : Appliction No : , 026 Filed : : DECISION ON REQUEST FOR : RECALCULATION of PATENT : TERM ...
Dokumente zum Namen
Application of High Power Thyristors in HVDC and FACTS ...Scribd
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Reiner Barthelmess #3 , Joerg Dorn #4. Infineon Bipolar GmbH & Co. KGWarstein, Germany Reiner Barthelmess #3 , Joerg Dorn #4. Infineon Bipolar GmbH & Co. KGWarstein, Germany 3 4
PCIM Europe Mesago
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— Jens Przybilla, Joerg Dorn, Reiner Barthelmess, Ralf Joerke, Uwe Kellner-Werdehausen, Infineon. Technologies Bipolar; D. High power bipolar — Jens Przybilla, Joerg Dorn, Reiner Barthelmess, Ralf Joerke, Uwe Kellner-Werdehausen, Infineon. Technologies Bipolar; D. High power bipolar ...
Wissenschaftliche Veröffentlichungen
Patents Assigned to INFINEON TECHNOLOGIES BIPOLAR ...Justia
patents.justia.com
Inventors: Reiner Barthelmess, Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Josef Lutz, Thomas Basler. SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE ... Inventors: Reiner Barthelmess, Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Josef Lutz, Thomas Basler. SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE ...
Sonstiges
Method for manufacturing an edge termination for a silicon ...Google Patents
patents.google.com
Reiner Barthelmess, Semiconductor component and method for producing the same. WO A1 (en), Cree, Inc. Double guard ring edge ... Reiner Barthelmess, Semiconductor component and method for producing the same. WO A1 (en), Cree, Inc. Double guard ring edge ...
Technik für den Weltmarkt aus BeleckeWestfalenpost
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— Freunde bei Infineon Bipolar: Dr. Sebastian Sommer, Dr. Reiner Barthelmess, Sarah Töpfer, Uwe Kellner-Werdehausen — Freunde bei Infineon Bipolar: Dr. Sebastian Sommer, Dr. Reiner Barthelmess, Sarah Töpfer, Uwe Kellner-Werdehausen ...
US A1 - Thyristor component with improved blocking...
patents.google.com
A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a...
US A1 - Method for Producing a Stop Zone in a Semiconductor...
patents.google.com
A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a...
US B1 - Method for producing a power semiconductor device with...
patents.google.com
A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a...
Conference Program. Power for Efficiency - PDF Free Download
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... Uwe Kellner- Werdehausen, Reiner Barthelmess, Infineon Technologies Bipolar, D; Jörg Dorn, Günter Sachs, Markus Uder, Stefan Völkel, Siemens, D PP
Technik für den Weltmarkt aus Belecke - wp.de
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Strom muss immer weiter transportiert werden. Eine Innovation der Belecker Infineon Bipolar bringt die Technik voran. Dafür gab’s einen Preis.
Short Descriptions Proceedings - PDF Free Download
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... for Very High Power Applications Mario Schenk, Jens Przybilla, Uwe Kellner-Werdehausen, Reiner Barthelmess, Infineon Technologies Bipolar, D; Jörg Dorn, ...
US A - Semiconductor device of SiC having an insulated gate and...
patents.google.com
US , 28 Feb 2008, 6 Jul 2010, Infineon Technologies Ag, Method for the ... US *, 18 Mar 2005, 22 Dec 2005, Reiner Barthelmess, Method ...
US B1 - IGBT with reduced forward voltage drop and reduced...
patents.google.com
The boundary between the P type silicon base and N + buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined...
WO A1 - Method for doping a semiconductor body, and...
patents.google.com
Other languages: German: French; Inventor: Reiner Barthelmess: Hans-Joachim Schulze: Uwe Kellner-Werdehausen; Original Assignee: Infineon Technologies ...
Application of High Power Thyristors in HVDC and FACTS Systems - PDF...
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1, Erlangen, Germany 1 2 Reiner Barthelmess #3, Joerg Dorn #4 Infineon Bipolar GmbH & Co. KGWarstein, Germany 3 4 Abstract Both ...
Bipolar High Power Semiconductors for efficient HVDC Energy...
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Die Energiewende - Blueprints for the new energy age; Bipolar High Power Semiconductors for efficient HVDC Energy Transmission in Super Grids
State of the Art of Bipolar Semiconductors for Very High Power...
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International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; State of the Art of Bipolar
WO A1 - Hochvolt-diode und verfahren zu deren herstellung...
patents.google.com
Inventores, Reiner Barthelmess, Frank Pfirsch, Anton Mauder, Gerhard Schmidt. Solicitante, eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co.
Semiconductor component including a short-circuit structure (2008) |...
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A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped...
TABLE OF CONTENTS VOLUME 1 - PDF Free Download
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... APPLICATIONS Comparison of High Power Semiconductor Technologies for Reiner Barthelmess, Ralf Joerke, Uwe Kellner-Werdehausen EMI Analysis of Infineon Technologies AG, Am Campeon 1-12, Neubiberg, Germany, ...
Verwandte Suchanfragen zu Reiner Barthelmess
| Joerg Dorn Ralf Joerke Jens Przybilla | Hans-Joachim Schulze |
Person "Barthelmess" (1) Vorname "Reiner" (13251) Name "Barthelmess" (53) |
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