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LinkedIn: Thomas Feudel | LinkedIn
Thomas Feudels berufliches Profil anzeigen LinkedIn ist das weltweit größte professionelle Netzwerk, das Fach- und Führungskräften wie Thomas Feudel dabei …
LinkedIn: Thomas Feudel - Deutschland | LinkedIn
Sehen Sie sich das Karriere-Profil von Thomas Feudel (Deutschland) auf LinkedIn an. LinkedIn ist das weltweit größte professionelle Netzwerk, das Fach- und ...
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Interessen
Globalfoundries Inc patent inventors (2011)
stks.freshpatents.com
Stephan Waidmann · Stephan Waidmann · Steven R. Soss · Sven Beyer · Thilo Scheiper · Thomas Feudel · Thomas Werner · Thorsten Kammler · Tibor Bolom.
Thomas Feudel - Patents
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Thomas Feudel patents Recent bibliographic sampling of Thomas Feudel patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):
Ausbildung
IEICE Trans - Simulation of RF Noise in MOSFETs Using Different...
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... Fabian M. BUFLER · Thomas FEUDEL · Wolfgang FICHTNER Publication IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp
IEICE Trans
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Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER Summary | Full Text:PDF (1.4MB)
Bücher
Jessy und Bing Liang (German Edition) - Best books online
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Thomas Feudel, Dresden, Germany. Takamitsu Bingliang Gao, Kyoto, Japan. Sukanta ... Jesse Jur, Raleigh, NC. Bhargava ECS's rapid-.
Advanced Physical Models for Silicon Device Simulation - Andreas...
books.google.nl
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the...
Ion Implantation and Activation - Kunihiro Suzuki - Google Books
books.google.nl
Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental...
Methodology for the Modeling and Simulation of Microsystems -...
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Over the past two decades, technologies for microsystems fabrication have made considerable progress. This has made possible a large variety of new commercial...
Dokumente zum Namen
[cond-mat ] Pseudoepitaxial transrotational structures in
arxiv.org
· ... Corrado Bongiorno, Brunella Cafra, Giovanni Mannino, Emanuele Rimini, Till Metzger, Cristian Mocuta, Thorsten Kammler, Thomas Feudel.
Ion implantation distribution generating method and simulator -...
www.freepatentsonline.com
A method of generating an ion implantation distribution by a computer is disclosed. The method includes calculating ion implantation distribution regions in a...
[PDF] PRESIDENT S REPORT CONTENTS. Meetings Calendar General Topics...
silo.tips
1 AVS Newsletter Spring AVS 125 Maiden Lane, 15th Floor New York NY PRESIDENT S REPORT Looking Forward to By D...
[PDF] TCAD SIMULATION STUDY OF FINFET BASED LNA - Technical ...www.technicaljournalsonline.com › ijeat
www.technicaljournalsonline.com
M.BUFLER, Thomas FEUDEL, and wolfgang FICHTNER, “Simulation of RF noise in MOSFETs using different transport models”, IEICE Trans. Electron, E86-.
Wissenschaftliche Veröffentlichungen
US Patent Application for METHOD OF FORMING LIGHTLY DOPED REGIONS IN...
patents.justia.com
Inventors: Thomas Feudel (Radebeul), Manfred Horstmann (Dresden), Karsten Wieczorek (Boxdorf) Application Number:
Nuclear Instruments and Methods in Physics Research Section B: Beam...
www.sciencedirect.com
Marc Herden, Daniel Gehre, Thomas Feudel, Andy Wei, ... Jaap v.d. Berg. Pages : Download PDF. Article preview. select article Manufacturability of fully ...
dblp: Custom Integrated Circuits Conference 2009
dblp.uni-trier.de
Bibliographic content of Custom Integrated Circuits Conference 2009
Veröffentlichungen allgemein
Influence of HALO and drain-extension doping gradients on transistor...
core.ac.uk
... of HALO and drain-extension doping gradients on transistor performance. By Axel Erlebach A, Thomas Feudel B, Andreas Schenk C and Christoph Zechner A ...
Artikel & Meinungen
EPi technology | nanodevicenanodevice.wordpress.com › › epi-tech...
nanodevice.wordpress.com
· Karuppanan Sekar, Wade A. Krull, Thomas N. Horsky, Thomas Feudel, Christian Krüger, Stefan Flachowsky, Ina Ostermay, Optimization of ...
Sonstiges
US B1 - Forming steep lateral doping distribution at...
patents.google.com
A semiconductor device is fabricated by implanting into a semiconductor substrate non-doping ions at a tilt angle of at least about 10° to laterally...
US A1 - Laterally diffused metal oxide semiconductor device...
patents.google.com
US A1 * Thomas Feudel Semiconductor device having improved doping profiles and method of improving the doping ...
US A - Method for making high-frequency bipolar transistor...
patents.google.com
A process for forming a structure of a high-frequency bipolar transistor on a layer of a semiconductor material with conductivity of a first type. The...
Modeling and Simulation of Wide Bandgap Semiconductor Devices:...
docplayer.net
... and the ISE who helped me during this time and also later I am especially grateful to Ulrich Krumbein, Andreas Schenk, Thomas Feudel, Christoph Wicki, ...
12:00 Mo-3 (Invited) Ion Implantation Requirements for Future DRAM...
docplayer.net
... Krueger 1, Thomas Feudel 1, Youn-ki Kim 2, John Flanagan 2, Thirumal Thanigaivelan 2, Zhiyong Zhao 2 1 Globalfoundries Dresden 2 Varian Semiconductor ...
Atomistic Modeling of the Ion Implantation Step Within a 2D Process...
www.cambridge.org
Atomistic Modeling of the Ion Implantation Step Within a 2D Process Simulator - Volume Bruno Schmidt, Matthias Posselt, Norbert Strecker, Thomas Feudel
US B2 - Strained semiconductor device with recessed channel...
patents.google.com
A semiconductor device having a strained channel and a method of manufacture thereof is provided. The semiconductor device has a gate electrode formed...
US A1 - Method for Fabricating Semiconductor Device...
patents.google.com
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor substrate including a core device region and an...
US B2 - Electrical fuse with metal silicide pipe under gate...
patents.google.com
US *, 19 May 2003, 6 May 2004, Thomas Feudel, Semiconductor device having improved doping profiles and method of improving the doping ...
Effect of Underlap on Input Impedance, Gain and Noise Figure in...
www.ciitresearch.org
Effect of Underlap on Input Impedance, Gain and Noise Figure in FinFET Based LNA
Fachbereich Elektrotechnik - PDF Kostenfreier Downloaddocplayer.org › Fachbereich-elektrotechnik
docplayer.org
... für angewandte Forschung und Technologie e.v. (ZAFT) Dr.-Ing. Jan Höntschel Dr.-Ing. Thomas Feudel Dr.-Ing. Manfred Horstmann AMD Saxony LLC & Co.
INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE T H E S E ...docplayer.fr › Institut-national-polytechni...
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1-7, [4] Gerhard Wachutka, Herbert Pavlicek, Thomas Fabula, Henning Haffner, Nicolaus Hey, Thomas Feudel, and Robert Strecker, CAD tools for MEMS.
SISPAD 2004
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of Washington, U.S.A.. Thomas Feudel, AMD Saxony LLC & Co. KG, Germany.
Patent List View - SIP GmbH
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Applicant. ADVANCED MICRO DEVICES INC. Inventor. Thomas Feudel Patrick Press Sven Beyer. Opposition. -. Filed Published.
Prof. Rimini Emanuele | Accademia Gioenia di Catania
www.gioenia.unict.it
Alessandra Alberti, Corrado Bongiorno, Brunella Cafra, Giovanni Mannino, Emanuele Rimini, Till Metzger, Cristian Mocuda, Thorsten Kammler, Thomas Feudel
SISPAD 2004
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U.S.A.. Thomas Feudel, AMD Saxony LLC & Co. KG, Germany. Masami Hane, NEC Corporation, Japan. Anco Heringa, Philips Research Laboratories ...
TECHNICAL PAPER PRESENTATION - PDF Free Download
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Influence of HALO and drain-extension doping gradients on transistor performance Axel Erlebach a,, Thomas Feudel b, Andreas Schenk c, Christoph.
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING...
www.patentsencyclopedia.com
Patent applications by Thomas Feudel, Radebeul DE
Simple analytical expression for dose dependent ion-implanted Sb...
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more. COLLAPSE. Kunihiro Suzuki, Ritsuo Sudo, Thomas Feudel · Details · Authors · Fields of science · Bibliography · Quotations · Similar · Collections ...
Thomas Feudel, Radebeul DE - Patent applications
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Patent application number Description Published; : TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIFIC CONTACT DESIGN - By locally
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