Torsten Wendav und Kurt Busch - Info zur Person

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Modeling of SiGeSn-based Semiconductor Heterostructures for...

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Title, Modeling of SiGeSn-based Semiconductor Heterostructures for Optoelectronic Applications. Author, Torsten Wendav. Contributors, Kurt Busch, Jörg ...

Low Temperature Deposition of High-k/Metal Gate Stacks on ...ACS Publications

pubs.acs.org

— ... Torsten Wendav, Kurt Busch, Joerg Schulze. Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of — ... Torsten Wendav, Kurt Busch, Joerg Schulze. Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of ...

Composition analysis and transition energies of ultrathin SnEindhoven University of Technology research portal

research.tue.nl

von IA Fischer · · Zitiert von: 18 — Koch ,8 Torsten Wendav,9 Kurt Busch,9,10 and Jörg Schulze2. 1Experimentalphysik und Funktionale Materialien, Brandenburgische Technische ... von IA Fischer · · Zitiert von: 18 — Koch ,8 Torsten Wendav,9 Kurt Busch,9,10 and Jörg Schulze2. 1Experimentalphysik und Funktionale Materialien, Brandenburgische Technische ...

GeSn/Ge multiquantum well photodetectors on Si substrates

opg.optica.org

Inga A. Fischer, Torsten Wendav, Lion Augel, Songchai Jitpakdeebodin, Filipe Oliveira, Alessandro Benedetti, Stefan Stefanov, Stefano Chiussi, Giovanni Capellini, Kurt Busch, and Jörg Schulze Opt. Express 23 (19) (2015)

Composition analysis and transition energies of ultrathin Sn ...

journals.aps.org

von IA Fischer · · Zitiert von: 7 — ... Sebastian Koelling, Paul M. Koenraad, Michael R. S. Huang, Christoph T. Koch, Torsten Wendav, Kurt Busch, and Jörg Schulze. Phys. Rev. › doi › PhysRe...

Jörg SchulzeDBLP

dblp.uni-trier.de

... Torsten Wendav, Kurt Busch , Jörg Schulze: Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential Torsten Wendav, Kurt Busch , Jörg Schulze: Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential ...

40th International Convention on Information and ...researchr.org

researchr.org

... Torsten Wendav, Kurt Busch, Joerg Schulze [doi] · Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scalingSabina Torsten Wendav, Kurt Busch, Joerg Schulze [doi] · Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scalingSabina ...

2014 Fall : Symposium J | EMRSEuropean Materials Research Society

www.european-mrs.com

Fischer (1), Torsten Wendav (2), Lion Augel (1), Songchai Jitpakdeebodin (1), Filipe Oliveira (1), Kurt Busch (2), Jörg Schulze (1) Affiliations : (1) ... Fischer (1), Torsten Wendav (2), Lion Augel (1), Songchai Jitpakdeebodin (1), Filipe Oliveira (1), Kurt Busch (2), Jörg Schulze (1) Affiliations : (1) ...

Composition analysis and transition energies of ultrathin Sn ...American Physical Society

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von IA Fischer · · Zitiert von: 18 — ... Koch, Torsten Wendav, Kurt Busch, and Jörg Schulze. Phys. Rev. Materials 4, – Published 19 February More. ×. Article · References · Citing ... von IA Fischer · · Zitiert von: 18 — ... Koch, Torsten Wendav, Kurt Busch, and Jörg Schulze. Phys. Rev. Materials 4, – Published 19 February More. ×. Article · References · Citing ...

Physical Review Materials - Volume 4 Issue 2Physical Review Journals

journals.aps.org

— Koch, Torsten Wendav, Kurt Busch, and Jörg Schulze. Phys. Rev. Materials 4, (2020) – Published 19 February Show Abstract. PDFHTML — Koch, Torsten Wendav, Kurt Busch, and Jörg Schulze. Phys. Rev. Materials 4, (2020) – Published 19 February Show Abstract. PDFHTML ...