Hans Haselier - Veröffentlichungen allgemein

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Time Voltage Dependency in Resistance Switching TiO 2

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von C Nauenheim · · Zitiert von: 1 — ... would like to thank Stephan Trellenkamp for electron beam patterning and Hans Haselier for thin film deposition and metallization. › article

Unsere Antwort für Demokratie und Menschenrechte

de.metapedia.org

— Hans Haselier, Frieseurmeister. Kathrin Hasenburger, Projektmanagerin, Ex-Buchhändlerin. Mahmoud Hassanein, Übersetzer. › wiki › Unsere_Antwort_für_D...

MOCVD of SrTa2O6 Thin Films for High-k Applications

link.springer.com

von S Regnery · — MOCVD of SrTa2O6 Thin Films for High-k Applications. Stephan Regnery. 1,2. , Reji Thomas. 1. , Hans Haselier. 1. , Peter Ehrhart. 1. , Rainer Waser. › pdf › PROC-811-D9.7.pdf

MOCVD of SrTa2O6 Thin Films for High-k Applications | SpringerLink

link.springer.com

SrTa2O6 thin films with thickness between 6 and 150nm were deposited in a multi-wafer planetary MOCVD reactor combined with a TRIJET® liquid delivery

Time Voltage Dependency in Resistance Switching TiO2 | SpringerLink

link.springer.com

Resistively switching TiO2 thin films show a multitude of resistance states, which are achieved during the programming and erasing of a memory cell. These

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Veröffentlichungen allgemein Hans Haselier

Time Voltage Dependency in Resistance Switching TiO 2

Unsere Antwort für Demokratie und Menschenrechte

MOCVD of SrTa2O6 Thin Films for High-k Applications

MOCVD of SrTa2O6 Thin Films for High-k Applications | SpringerLink

Time Voltage Dependency in Resistance Switching TiO2 | SpringerLink